Chapter 5 - Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices

Mircea Guina, Shu M. Wang, Arto Aho

    Tutkimustuotos: LukuScientific

    Abstrakti

    Molecular beam epitaxy of dilute nitride materials has progressed a long way toward claiming its unique place as a technology that enables the development of new types of optoelectronics devices. This chapter starts by reviewing the particularities related to epitaxial incorporation of nitrogen into III–V materials using plasma-assisted molecular beam epitaxy. We then focus on describing the interplay between the growth parameters and nitrogen incorporation processes in dilute nitride arsenides (III-N-As). Emphasis is put on nitrogen-related growth kinetics that are accompanied by various bonding configurations and formation of several types of defects. Then we review the basics of MBE for dilute nitride antimonides (III-N-Sb) and dilute nitride phosphides (III-N-P). Finally, we review the growth optimization and properties of several classes of dilute nitride heterostructures for optoelectronics. These include uncooled long-wavelength laser diodes, ultrafast nonlinear devices, high power lasers enabling yellow-orange emission by frequency doubling, and high-efficiency multijunction solar cells, for which dilute nitride MBE technology is rapidly evolving and provides development opportunities.
    AlkuperäiskieliEnglanti
    OtsikkoMolecular Beam Epitaxy (Second Edition)
    AlaotsikkoFrom Research to Mass Production
    ToimittajatMohamed Henini
    KustantajaElsevier
    Luku5
    Sivut73-94
    PainosSecond
    ISBN (elektroninen)978-0-12-812137-5
    ISBN (painettu)978-0-12-812136-8
    DOI - pysyväislinkit
    TilaJulkaistu - 2018
    OKM-julkaisutyyppiB2 Kirjan tai muun kokoomateoksen osa

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