Chapter 5 - Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices

Keyphrases

• Molecular Beam Epitaxy 100%
• Dilute Nitrides 100%
• III-N 42%
• Nitrogen Incorporation 28%
• Frequency Doubling 14%
• Ultrafast 14%
• Diode Laser 14%
• High Efficiency 14%
• Growth Parameters 14%
• Nitride Heterostructure 14%
• High Power Laser 14%
• Nitride Materials 14%
• Growth Kinetics 14%
• Plasma-assisted Molecular Beam Epitaxy 14%
• Epitaxial 14%
• Multijunction Solar Cells 14%
• Growth Properties 14%
• Nonlinear Devices 14%
• Arsenides 14%
• Antimonides 14%
• Bonding Configuration 14%
• Bond Formation 14%
• Rapidly Evolving 14%
• Defect Type 14%
• Growth Optimization 14%
• Long Wavelength Lasers 14%
• Incorporation Process 14%
• Phosphide 14%
• Uncooled 14%
• Yellow-green Emission 14%

Material Science

• Nitride Compound 100%
• Molecular Beam Epitaxy 100%
• Solar Cell 14%
• Laser Diode 14%
• Heterojunction 14%