TY - GEN
T1 - Characteristics of a Dilute Nitride InGaAsN Double Quantum Well Laser at 1047 nm
AU - Dragulinescu, Andrei
AU - Dumitrescu, Mihail
N1 - Funding Information:
This work was funded by ENI project, contract no. 41PCCDI/2018 and by SENSIS project, contract no. 71PCCDI/2018.
Publisher Copyright:
© 2020 IEEE.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2020/10/21
Y1 - 2020/10/21
N2 - Quantum well (QW) semiconductor lasers working at various wavelengths have been extensively used in the last decade due to their advantages in a wide range of application domains. One of the material systems used for fabricating these laser structures is InGaAsN with a very small percent of nitrogen, having useful applications for lasers working at long wavelengths and for high-efficiency multi-junction solar cells. We simulated the performance characteristics of a 1047 nm InGaAsN QW laser, specifically the I-V and L-I characteristics, energy band diagram, wave intensity distribution, threshold current, slope efficiency and external differential quantum efficiency, with the purpose of gaining a wide perspective on the structure performance in terms of some of its most important parameters and to constitute a useful reference for applications
AB - Quantum well (QW) semiconductor lasers working at various wavelengths have been extensively used in the last decade due to their advantages in a wide range of application domains. One of the material systems used for fabricating these laser structures is InGaAsN with a very small percent of nitrogen, having useful applications for lasers working at long wavelengths and for high-efficiency multi-junction solar cells. We simulated the performance characteristics of a 1047 nm InGaAsN QW laser, specifically the I-V and L-I characteristics, energy band diagram, wave intensity distribution, threshold current, slope efficiency and external differential quantum efficiency, with the purpose of gaining a wide perspective on the structure performance in terms of some of its most important parameters and to constitute a useful reference for applications
KW - dilute nitride
KW - InGaAsN
KW - laser
KW - quantum well
U2 - 10.1109/SIITME50350.2020.9292223
DO - 10.1109/SIITME50350.2020.9292223
M3 - Conference contribution
AN - SCOPUS:85099540656
SP - 327
EP - 330
BT - 2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging, SIITME 2020 - Conference Proceedings
PB - IEEE
T2 - IEEE International Symposium for Design and Technology in Electronic Packaging
Y2 - 21 October 2020 through 24 October 2020
ER -