Characterization of GaN-based Quantum Dots within Vertical-Cavity Surface-Emitting Lasers for realizing Green Lasers by Simulations

Mohammed Nadir

doi:10.1109/NUSOD.2016.7547083

Characterization of GaN-based Quantum Dots within Vertical-Cavity Surface-Emitting Lasers for realizing Green Lasers by Simulations

Tutkimustuotos: Abstrakti › Tieteellinen

Alkuperäiskieli	Englanti
DOI - pysyväislinkit	https://doi.org/10.1109/NUSOD.2016.7547083
Tila	Julkaistu - 2016
OKM-julkaisutyyppi	Ei OKM-tyyppiä
Tapahtuma	16th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices - Kesto: 11 heinäk. 2016 → 15 heinäk. 2016

Conference

Conference	16th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices
Ajanjakso	11/07/16 → 15/07/16

Pääsy asiakirjaan

10.1109/NUSOD.2016.7547083

Siteeraa tätä

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title = "Characterization of GaN-based Quantum Dots within Vertical-Cavity Surface-Emitting Lasers for realizing Green Lasers by Simulations",

author = "Mohammed Nadir",

year = "2016",

doi = "10.1109/NUSOD.2016.7547083",

language = "English",

note = "16th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices ; Conference date: 11-07-2016 Through 15-07-2016",

}

TY - CONF

T1 - Characterization of GaN-based Quantum Dots within Vertical-Cavity Surface-Emitting Lasers for realizing Green Lasers by Simulations

AU - Nadir, Mohammed

PY - 2016

Y1 - 2016

U2 - 10.1109/NUSOD.2016.7547083

DO - 10.1109/NUSOD.2016.7547083

M3 - Abstract

T2 - 16th International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices

Y2 - 11 July 2016 through 15 July 2016

ER -