Characterization of GaN-based quantum nanowire and resonant tunneling diode by simulations

Mohammed Nadir

Characterization of GaN-based quantum nanowire and resonant tunneling diode by simulations

Fysiikka

Tutkimustuotos: Abstrakti › Tieteellinen

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2019
OKM-julkaisutyyppi	Ei OKM-tyyppiä
Tapahtuma	19th International Conference on Numerical Simulations of Semiconductor Optoelectronic Devices - Otttawa, Kanada Kesto: 8 heinäk. 2019 → 12 heinäk. 2019

Conference

Conference	19th International Conference on Numerical Simulations of Semiconductor Optoelectronic Devices
Lyhennettä	NUSOD
Maa/Alue	Kanada
Kaupunki	Otttawa
Ajanjakso	8/07/19 → 12/07/19

Pääsy asiakirjaan

https://www.nusod.org/2019/MPDP2.pdf

Siteeraa tätä

@conference{9f2f42feb72b4874a5474e283d6513e1,

title = "Characterization of GaN-based quantum nanowire and resonant tunneling diode by simulations",

author = "Mohammed Nadir",

year = "2019",

language = "English",

note = "19th International Conference on Numerical Simulations of Semiconductor Optoelectronic Devices, NUSOD ; Conference date: 08-07-2019 Through 12-07-2019",

}