Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences

Tomi Roinila; Xiao Yu; Anran Gao; Tie Li; Jarmo Verho; Matti Vilkko; Pasi Kallio; Yuelin Wang; Jukka Lekkala

Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences

Julkaisun otsikon käännös: Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences

Tomi Roinila, Xiao Yu, Anran Gao, Tie Li, Jarmo Verho, Matti Vilkko, Pasi Kallio, Yuelin Wang, Jukka Lekkala

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

3 Sitaatiot (Scopus)

Julkaisun otsikon käännös	Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences
Alkuperäiskieli	Englanti
Otsikko	Proceedings of Second International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 29 Aug. - 1 Sept. 2012, Xi'an, China
Kustantaja	Changchun University of Science and Technology
Sivut	1-5
Sivumäärä	5
ISBN (elektroninen)	978-1-4673-4589-7
ISBN (painettu)	978-1-4673-4588-0
Tila	Julkaistu - 2012
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa

Julkaisusarja

Nimi	International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale

Julkaisufoorumi-taso

Jufo-taso 1

Siteeraa tätä

Roinila, T., Yu, X., Gao, A., Li, T., Verho, J., Vilkko, M., Kallio, P., Wang, Y., & Lekkala, J. (2012). Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences. teoksessa Proceedings of Second International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 29 Aug. - 1 Sept. 2012, Xi'an, China (Sivut 1-5). (International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale). Changchun University of Science and Technology.

Roinila, Tomi ; Yu, Xiao ; Gao, Anran et al. / Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences. Proceedings of Second International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 29 Aug. - 1 Sept. 2012, Xi'an, China. Changchun University of Science and Technology, 2012. Sivut 1-5 (International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale).

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title = "Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences",

author = "Tomi Roinila and Xiao Yu and Anran Gao and Tie Li and Jarmo Verho and Matti Vilkko and Pasi Kallio and Yuelin Wang and Jukka Lekkala",

note = "Contribution: organisation=ase aci,FACT1=1<br/>Publisher name: Changchun University of Science and Technology",

year = "2012",

language = "English",

isbn = "978-1-4673-4588-0",

series = "International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale",

publisher = "Changchun University of Science and Technology",

pages = "1--5",

booktitle = "Proceedings of Second International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 29 Aug. - 1 Sept. 2012, Xi'an, China",

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Roinila, T, Yu, X, Gao, A, Li, T, Verho, J, Vilkko, M , Kallio, P, Wang, Y & Lekkala, J 2012, Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences. julkaisussa Proceedings of Second International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 29 Aug. - 1 Sept. 2012, Xi'an, China. International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, Changchun University of Science and Technology, Sivut 1-5.

Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences. / Roinila, Tomi; Yu, Xiao; Gao, Anran et al.
Proceedings of Second International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 29 Aug. - 1 Sept. 2012, Xi'an, China. Changchun University of Science and Technology, 2012. s. 1-5 (International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale).

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

TY - GEN

T1 - Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences

AU - Roinila, Tomi

AU - Yu, Xiao

AU - Gao, Anran

AU - Li, Tie

AU - Verho, Jarmo

AU - Vilkko, Matti

AU - Kallio, Pasi

AU - Wang, Yuelin

AU - Lekkala, Jukka

N1 - Contribution: organisation=ase aci,FACT1=1<br/>Publisher name: Changchun University of Science and Technology

PY - 2012

Y1 - 2012

M3 - Conference contribution

SN - 978-1-4673-4588-0

T3 - International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale

SP - 1

EP - 5

BT - Proceedings of Second International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 29 Aug. - 1 Sept. 2012, Xi'an, China

PB - Changchun University of Science and Technology

ER -

Roinila T, Yu X, Gao A, Li T, Verho J, Vilkko M et al. Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences. julkaisussa Proceedings of Second International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 29 Aug. - 1 Sept. 2012, Xi'an, China. Changchun University of Science and Technology. 2012. s. 1-5. (International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale).