Combined MBE-MOCVD process for high-efficiency multijunction solar cells

Antti Tukiainen; Arto Aho; Gabriele Gori; Ville Polojärvi; Mariacristina Casale; Erminio Greco; Riku Isoaho; Timo Aho; Marianna Raappana; Roberta Campesato; Mircea Guina

Combined MBE-MOCVD process for high-efficiency multijunction solar cells

Antti Tukiainen, Arto Aho, Gabriele Gori, Ville Polojärvi, Mariacristina Casale, Erminio Greco, Riku Isoaho, Timo Aho, Marianna Raappana, Roberta Campesato, Mircea Guina

Tutkimustuotos: Abstrakti › Scientific

175 Lataukset (Pure)

Abstrakti

We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2016
Tapahtuma	MBE2016 19th International Conference on Molecular Beam Epitaxy - Montpellier, Ranska Kesto: 4 syysk. 2016 → 9 syysk. 2016 https://mbe2016.sciencesconf.org/

Conference

Conference	MBE2016 19th International Conference on Molecular Beam Epitaxy
Lyhennettä	MBE2016
Maa/Alue	Ranska
Kaupunki	Montpellier
Ajanjakso	4/09/16 → 9/09/16
www-osoite	https://mbe2016.sciencesconf.org/

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MBe-abstract-Tukiainen-uploadedSubmitted manuscript, 706 KB

Combined MBE-MOCVD process for high-efficiency multijunction solar cells
Antti Tukiainen (Speaker)
2016
Aktiviteetti: Konferenssiesitelmä

Siteeraa tätä

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title = "Combined MBE-MOCVD process for high-efficiency multijunction solar cells",

abstract = "We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications. ",

author = "Antti Tukiainen and Arto Aho and Gabriele Gori and Ville Poloj{\"a}rvi and Mariacristina Casale and Erminio Greco and Riku Isoaho and Timo Aho and Marianna Raappana and Roberta Campesato and Mircea Guina",

year = "2016",

language = "English",

note = "MBE2016 19th International Conference on Molecular Beam Epitaxy, MBE2016 ; Conference date: 04-09-2016 Through 09-09-2016",

url = "https://mbe2016.sciencesconf.org/",

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TY - CONF

T1 - Combined MBE-MOCVD process for high-efficiency multijunction solar cells

AU - Tukiainen, Antti

AU - Aho, Arto

AU - Gori, Gabriele

AU - Polojärvi, Ville

AU - Casale, Mariacristina

AU - Greco, Erminio

AU - Isoaho, Riku

AU - Aho, Timo

AU - Raappana, Marianna

AU - Campesato, Roberta

AU - Guina, Mircea

PY - 2016

Y1 - 2016

N2 - We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.

AB - We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.

M3 - Abstract

T2 - MBE2016 19th International Conference on Molecular Beam Epitaxy

Y2 - 4 September 2016 through 9 September 2016

ER -

Combined MBE-MOCVD process for high-efficiency multijunction solar cells

Abstrakti

Conference

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Aktiviteetit

Combined MBE-MOCVD process for high-efficiency multijunction solar cells

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