Aktiviteetteja vuodessa
Abstrakti
We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.
Alkuperäiskieli | Englanti |
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Tila | Julkaistu - 2016 |
Tapahtuma | MBE2016 19th International Conference on Molecular Beam Epitaxy - Montpellier, Ranska Kesto: 4 syysk. 2016 → 9 syysk. 2016 https://mbe2016.sciencesconf.org/ |
Conference
Conference | MBE2016 19th International Conference on Molecular Beam Epitaxy |
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Lyhennettä | MBE2016 |
Maa/Alue | Ranska |
Kaupunki | Montpellier |
Ajanjakso | 4/09/16 → 9/09/16 |
www-osoite |
Sormenjälki
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Combined MBE-MOCVD process for high-efficiency multijunction solar cells
Tukiainen, A. (Speaker)
2016Aktiviteetti: Konferenssiesitelmä