@inproceedings{7138bad4dbab47eeae923efa6fc3932b,
title = "Comparison of {\textquoteleft}shallow{\textquoteright} and {\textquoteleft}deep{\textquoteright} junction architectures for MBE-grown InAs/GaAs quantum dot solar cells",
abstract = "We report on the fabrication of InAs/GaAs quantum dot solar cells with high open circuit voltage by molecular beam epitaxy. {\textquoteleft}Shallow{\textquoteright} and {\textquoteleft}deep{\textquoteright} junction architectures were compared. The highest open circuit voltage of 0.94 V was obtained for the {\textquoteleft}shallow{\textquoteright} junction configuration. The open circuit voltage of InAs quantum dot solar cells decreased only by ~40 mV compared to GaAs reference cells for both junction architectures indicating high quality quantum dots. The open circuit voltage of InAs/GaAs quantum dot solar cells was also found to be dependent on the size of quantum dots.",
author = "Antti Tukiainen and Jari Lyytik{\"a}inen and Timo Aho and Eero Halonen and Marianna Raappana and Federica Cappelluti and Mircea Guina",
year = "2018",
month = nov,
doi = "10.1109/PVSC.2018.8548180",
language = "English",
series = "CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE",
publisher = "IEEE",
pages = "2950--2952",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)",
address = "United States",
note = "World Conference on Photovoltaic Energy Conversion ; Conference date: 05-12-1994",
}