Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures

Jaakko Mäkelä; Marjukka Tuominen; Johnny Dahl; Sari Granroth; Muhammad Yasir; Juha-Pekka Lehtiö; Rami-Roope Uusitalo; Mikhail Kuzmin; Marko Punkkinen; Pekka Laukkanen; Kalevi Kokko; Roberto Félix; Mika Lastusaari; Ville Polojärvi; Jari Lyytikäinen; Antti Tukiainen; Mircea Guina

doi:10.1002/admi.201700722

Decreasing Defect-State Density of Al₂O₃/Ga_xIn_1-xAs Device Interfaces with InO_x Structures

Jaakko Mäkelä, Marjukka Tuominen, Johnny Dahl, Sari Granroth, Muhammad Yasir, Juha-Pekka Lehtiö, Rami-Roope Uusitalo, Mikhail Kuzmin, Marko Punkkinen, Pekka Laukkanen, Kalevi Kokko, Roberto Félix, Mika Lastusaari, Ville Polojärvi, Jari Lyytikäinen, Antti Tukiainen, Mircea Guina

Tutkimustuotos: Artikkeli › Scientific › vertaisarvioitu

4 Sitaatiot (Scopus)

5 Lataukset (Pure)

Abstrakti

Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.

Alkuperäiskieli	Englanti
Artikkeli	1700722
Sivumäärä	7
Julkaisu	Advanced Materials Interfaces
Vuosikerta	4
Numero	22
Varhainen verkossa julkaisun päivämäärä	19 syysk. 2017
DOI - pysyväislinkit	https://doi.org/10.1002/admi.201700722
Tila	Julkaistu - 2017
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Physics and Astronomy(all)

Pääsy asiakirjaan

10.1002/admi.201700722

decreasing_defect_state_density_2017
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Accepted author manuscript, 1,09 MB

http://urn.fi/URN:NBN:fi:tuni-201912307136

Siteeraa tätä

Mäkelä, J., Tuominen, M., Dahl, J., Granroth, S., Yasir, M., Lehtiö, J-P., Uusitalo, R-R., Kuzmin, M., Punkkinen, M., Laukkanen, P., Kokko, K., Félix, R., Lastusaari, M., Polojärvi, V., Lyytikäinen, J., Tukiainen, A., & Guina, M. (2017). Decreasing Defect-State Density of Al₂O₃/Ga_xIn_1-xAs Device Interfaces with InO_x Structures. Advanced Materials Interfaces, 4(22), [1700722]. https://doi.org/10.1002/admi.201700722

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title = "Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures",

abstract = "Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.",

keywords = "defects, GaAs, HAXPES, interface, oxide",

author = "Jaakko M{\"a}kel{\"a} and Marjukka Tuominen and Johnny Dahl and Sari Granroth and Muhammad Yasir and Juha-Pekka Lehti{\"o} and Rami-Roope Uusitalo and Mikhail Kuzmin and Marko Punkkinen and Pekka Laukkanen and Kalevi Kokko and Roberto F{\'e}lix and Mika Lastusaari and Ville Poloj{\"a}rvi and Jari Lyytik{\"a}inen and Antti Tukiainen and Mircea Guina",

year = "2017",

doi = "10.1002/admi.201700722",

language = "English",

volume = "4",

journal = "Advanced Materials Interfaces",

issn = "2196-7350",

publisher = "Wiley",

number = "22",

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Mäkelä, J, Tuominen, M, Dahl, J, Granroth, S, Yasir, M, Lehtiö, J-P, Uusitalo, R-R, Kuzmin, M, Punkkinen, M, Laukkanen, P, Kokko, K, Félix, R, Lastusaari, M, Polojärvi, V, Lyytikäinen, J, Tukiainen, A & Guina, M 2017, 'Decreasing Defect-State Density of Al₂O₃/Ga_xIn_1-xAs Device Interfaces with InO_x Structures', Advanced Materials Interfaces, Vuosikerta 4, Nro 22, 1700722. https://doi.org/10.1002/admi.201700722

TY - JOUR

T1 - Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures

AU - Mäkelä, Jaakko

AU - Tuominen, Marjukka

AU - Dahl, Johnny

AU - Granroth, Sari

AU - Yasir, Muhammad

AU - Lehtiö, Juha-Pekka

AU - Uusitalo, Rami-Roope

AU - Kuzmin, Mikhail

AU - Punkkinen, Marko

AU - Laukkanen, Pekka

AU - Kokko, Kalevi

AU - Félix, Roberto

AU - Lastusaari, Mika

AU - Polojärvi, Ville

AU - Lyytikäinen, Jari

AU - Tukiainen, Antti

AU - Guina, Mircea

PY - 2017

Y1 - 2017

N2 - Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.

AB - Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.

KW - defects

KW - GaAs

KW - HAXPES

KW - interface

KW - oxide

U2 - 10.1002/admi.201700722

DO - 10.1002/admi.201700722

M3 - Article

VL - 4

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 22

M1 - 1700722

ER -