Density functional simulations of a conductive bridging random access memory cell: Ag filament formation in amorphous GeS2

Physics & Astronomy

• random access memory 100%
• filaments 74%
• electrodes 53%
• cells 46%
• atoms 43%
• simulation 32%
• electrolytes 28%
• electric fields 20%
• chalcogenides 17%
• sulfur 16%
• functionals 16%
• strings 14%
• cations 14%
• electrostatics 13%
• solid state 13%
• electronic structure 12%
• wire 12%
• molecular dynamics 12%

Engineering & Materials Science

• Atoms 89%
• Electrodes 66%
• Data storage equipment 52%
• Electrolytes 33%
• Electric fields 31%
• Chalcogenides 27%
• Electronic structure 25%
• Positive ions 21%
• Molecular dynamics 19%
• Electrostatics 18%
• Sulfur 16%
• Wire 12%
• Computer simulation 9%

Chemical Compounds

• Filament 85%
• Amorphous Material 59%
• Simulation 54%
• Behavior as Electrode 43%
• Electric Field 31%
• Atomic Diffusion 28%
• Molecular Cluster 22%
• Electrostatic Potential 18%
• Compound Mobility 13%
• Molecular Dynamics 12%
• Electronic State 12%
• Cation 10%