Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Niu Jin; Sung Yong Chung; Anthony T. Rice; Paul R. Berger; Phillip E. Thompson; Cristian Rivas; Roger Lake; Stephen Sudirgo; Jeremy J. Kempisty; Branislav Curanovic; Sean L. Rommel; Karl D. Hirschman; Santosh K. Kurinec; Peter H. Chi; David S. Simons

doi:10.1109/TED.2003.815375

Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Niu Jin^*
, Sung Yong Chung
, Anthony T. Rice
, Paul R. Berger
, Phillip E. Thompson
, Cristian Rivas
, Roger Lake
, Stephen Sudirgo
, Jeremy J. Kempisty
, Branislav Curanovic
, Sean L. Rommel
, Karl D. Hirschman
, Santosh K. Kurinec
, Peter H. Chi
, David S. Simons

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

46 Sitaatiot (Scopus)

Abstrakti

Si/SiGe resonant interband tunnel diodes (RITDs) employing δ-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers sandwiching the B δ-doping spike used to suppress B out-diffusion are discussed. A room-temperature PVCR of 3.6 was measured with a peak current density of 0.3 kA/cm². Results clearly show that by introducing SiGe layers to clad the B δ-doping layer, B diffusion is suppressed during post-growth annealing, which raises the thermal budget. A higher RTA temperature appears to be more effective in reducing defects and results in a lower valley current and higher PVCR. RITDs grown by selective area molecular beam epitaxy (MBE) have been realized inside of low-temperature oxide openings, with performance comparable with RITDs grown on bulk substrates.

Alkuperäiskieli	Englanti
Sivut	1876-1884
Sivumäärä	9
Julkaisu	IEEE Transactions on Electron Devices
Vuosikerta	50
Numero	9
DOI - pysyväislinkit	https://doi.org/10.1109/TED.2003.815375
Tila	Julkaistu - 2003
Julkaistu ulkoisesti	Kyllä
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

Manuscript received August 29, 2002; revised April 25, 2003. This work at Ohio State was supported by the national Science Foundation under Grants ECS-0196208 and ECS-0196054. The work at NRL was supported by the Office of Naval Research. The review of this paper was arranged by Editor G. Snider. N. Jin, S.-Y. Chung, and A. T. Rice are with the Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210 USA. P. R. Berger is with the Department of Electrical Engineering and the Department of Physics, The Ohio State University, Smith Laboratory, Columbus, OH 43210 USA (e-mail: [email protected]). P. E. Thompson is with the Naval Research Laboratory, Washington, DC 20375-5347 USA. C. Rivas and R. Lake are with the University of California, Riverside, CA 92521-0425 USA. S. Sudirgo, J. J. Kempisty, B. Curanovic, S. L. Rommel, K. D. Hirschman, and S. K. Kurinec are with Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623 USA. P. H. Chi and D. S. Simons are with the National Institute of Standards and Technology, Gaithersburg, MD 20899 USA. Digital Object Identifier 10.1109/TED.2003.815375

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Pääsy asiakirjaan

10.1109/TED.2003.815375

Siteeraa tätä

Jin, N., Chung, S. Y., Rice, A. T., Berger, P. R., Thompson, P. E., Rivas, C., Lake, R., Sudirgo, S., Kempisty, J. J., Curanovic, B., Rommel, S. L., Hirschman, K. D., Kurinec, S. K., Chi, P. H., & Simons, D. S. (2003). Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions. IEEE Transactions on Electron Devices, 50(9), 1876-1884. https://doi.org/10.1109/TED.2003.815375

@article{f1006090935c4824be8771c37eb182a9,

title = "Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions",

abstract = "Si/SiGe resonant interband tunnel diodes (RITDs) employing δ-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers sandwiching the B δ-doping spike used to suppress B out-diffusion are discussed. A room-temperature PVCR of 3.6 was measured with a peak current density of 0.3 kA/cm2. Results clearly show that by introducing SiGe layers to clad the B δ-doping layer, B diffusion is suppressed during post-growth annealing, which raises the thermal budget. A higher RTA temperature appears to be more effective in reducing defects and results in a lower valley current and higher PVCR. RITDs grown by selective area molecular beam epitaxy (MBE) have been realized inside of low-temperature oxide openings, with performance comparable with RITDs grown on bulk substrates.",

keywords = "CMOS compatibility, Dopant diffusion, Ge-Si alloys, Low-temperature oxide, Molecular beam epitaxy, Negative differential resistance, Patterned growth, Rapid thermal annealing, Resonant interband tunneling diodes, Silicon",

author = "Niu Jin and Chung, \{Sung Yong\} and Rice, \{Anthony T.\} and Berger, \{Paul R.\} and Thompson, \{Phillip E.\} and Cristian Rivas and Roger Lake and Stephen Sudirgo and Kempisty, \{Jeremy J.\} and Branislav Curanovic and Rommel, \{Sean L.\} and Hirschman, \{Karl D.\} and Kurinec, \{Santosh K.\} and Chi, \{Peter H.\} and Simons, \{David S.\}",

note = "Funding Information: Manuscript received August 29, 2002; revised April 25, 2003. This work at Ohio State was supported by the national Science Foundation under Grants ECS-0196208 and ECS-0196054. The work at NRL was supported by the Office of Naval Research. The review of this paper was arranged by Editor G. Snider. N. Jin, S.-Y. Chung, and A. T. Rice are with the Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210 USA. P. R. Berger is with the Department of Electrical Engineering and the Department of Physics, The Ohio State University, Smith Laboratory, Columbus, OH 43210 USA (e-mail: [email protected]). P. E. Thompson is with the Naval Research Laboratory, Washington, DC 20375-5347 USA. C. Rivas and R. Lake are with the University of California, Riverside, CA 92521-0425 USA. S. Sudirgo, J. J. Kempisty, B. Curanovic, S. L. Rommel, K. D. Hirschman, and S. K. Kurinec are with Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623 USA. P. H. Chi and D. S. Simons are with the National Institute of Standards and Technology, Gaithersburg, MD 20899 USA. Digital Object Identifier 10.1109/TED.2003.815375 Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2003",

doi = "10.1109/TED.2003.815375",

language = "English",

volume = "50",

pages = "1876--1884",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

Jin, N, Chung, SY, Rice, AT, Berger, PR, Thompson, PE, Rivas, C, Lake, R, Sudirgo, S, Kempisty, JJ, Curanovic, B, Rommel, SL, Hirschman, KD, Kurinec, SK, Chi, PH & Simons, DS 2003, 'Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions', IEEE Transactions on Electron Devices, Vuosikerta 50, Nro 9, Sivut 1876-1884. https://doi.org/10.1109/TED.2003.815375

TY - JOUR

T1 - Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

AU - Jin, Niu

AU - Chung, Sung Yong

AU - Rice, Anthony T.

AU - Berger, Paul R.

AU - Thompson, Phillip E.

AU - Rivas, Cristian

AU - Lake, Roger

AU - Sudirgo, Stephen

AU - Kempisty, Jeremy J.

AU - Curanovic, Branislav

AU - Rommel, Sean L.

AU - Hirschman, Karl D.

AU - Kurinec, Santosh K.

AU - Chi, Peter H.

AU - Simons, David S.

N1 - Funding Information: Manuscript received August 29, 2002; revised April 25, 2003. This work at Ohio State was supported by the national Science Foundation under Grants ECS-0196208 and ECS-0196054. The work at NRL was supported by the Office of Naval Research. The review of this paper was arranged by Editor G. Snider. N. Jin, S.-Y. Chung, and A. T. Rice are with the Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210 USA. P. R. Berger is with the Department of Electrical Engineering and the Department of Physics, The Ohio State University, Smith Laboratory, Columbus, OH 43210 USA (e-mail: [email protected]). P. E. Thompson is with the Naval Research Laboratory, Washington, DC 20375-5347 USA. C. Rivas and R. Lake are with the University of California, Riverside, CA 92521-0425 USA. S. Sudirgo, J. J. Kempisty, B. Curanovic, S. L. Rommel, K. D. Hirschman, and S. K. Kurinec are with Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623 USA. P. H. Chi and D. S. Simons are with the National Institute of Standards and Technology, Gaithersburg, MD 20899 USA. Digital Object Identifier 10.1109/TED.2003.815375 Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2003

Y1 - 2003

N2 - Si/SiGe resonant interband tunnel diodes (RITDs) employing δ-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers sandwiching the B δ-doping spike used to suppress B out-diffusion are discussed. A room-temperature PVCR of 3.6 was measured with a peak current density of 0.3 kA/cm2. Results clearly show that by introducing SiGe layers to clad the B δ-doping layer, B diffusion is suppressed during post-growth annealing, which raises the thermal budget. A higher RTA temperature appears to be more effective in reducing defects and results in a lower valley current and higher PVCR. RITDs grown by selective area molecular beam epitaxy (MBE) have been realized inside of low-temperature oxide openings, with performance comparable with RITDs grown on bulk substrates.

AB - Si/SiGe resonant interband tunnel diodes (RITDs) employing δ-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers sandwiching the B δ-doping spike used to suppress B out-diffusion are discussed. A room-temperature PVCR of 3.6 was measured with a peak current density of 0.3 kA/cm2. Results clearly show that by introducing SiGe layers to clad the B δ-doping layer, B diffusion is suppressed during post-growth annealing, which raises the thermal budget. A higher RTA temperature appears to be more effective in reducing defects and results in a lower valley current and higher PVCR. RITDs grown by selective area molecular beam epitaxy (MBE) have been realized inside of low-temperature oxide openings, with performance comparable with RITDs grown on bulk substrates.

KW - CMOS compatibility

KW - Dopant diffusion

KW - Ge-Si alloys

KW - Low-temperature oxide

KW - Molecular beam epitaxy

KW - Negative differential resistance

KW - Patterned growth

KW - Rapid thermal annealing

KW - Resonant interband tunneling diodes

KW - Silicon

U2 - 10.1109/TED.2003.815375

DO - 10.1109/TED.2003.815375

M3 - Article

AN - SCOPUS:0041409587

SN - 0018-9383

VL - 50

SP - 1876

EP - 1884

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Abstrakti

Rahoitus

!!ASJC Scopus subject areas

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