@article{c6810c0ea1c14a3a833ab80fad1e2216,
title = "Donor levels and the microscopic structure of the DX center in n-type Si-doped AlGaInP grown by molecular-beam epitaxy",
author = "J. M{\"a}kinen and T. Laine and J. Partanen and K. Saarinen and P. Hautoj{\"a}rvi and K. Tappura and T. Hakkarainen and H. Asonen and M. Pessa and J.P. Kauppinen and K. V{\"a}nttinen and Paalanen, \{M. A.\}",
note = "Contribution: organisation=fys,FACT1=1",
year = "1996",
language = "English",
volume = "53",
pages = "7851--7862",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "12",
}