Effect of Non-Resonant Gain Structure Design in Membrane External-Cavity Surface-Emitting Lasers

Philipp Tatar-Mathes; Hoy My Phung; Aaron Rogers; Patrik Rajala; Sanna Ranta; Mircea Guina; Hermann Kahle

doi:10.1109/LPT.2023.3270404

Effect of Non-Resonant Gain Structure Design in Membrane External-Cavity Surface-Emitting Lasers

Philipp Tatar-Mathes, Hoy My Phung, Aaron Rogers, Patrik Rajala, Sanna Ranta, Mircea Guina, Hermann Kahle

Fysiikka

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

3 Sitaatiot (Scopus)

19 Lataukset (Pure)

Abstrakti

The operation of a semiconductor membrane external-cavity surface-emitting laser (MECSEL) employing a gain membrane with a cavity design, which is non-resonant regarding the two semiconductor-heat-spreader interfaces, is presented. The MECSEL delivers watt-level output power, in line with state-of-the-art results. The study provides new evidence that the design criteria of a MECSEL gain region are significantly relaxed compared to active regions employing distributed Bragg reflectors, for which the field distribution is set by the Bragg condition leading to tight tolerances for positioning of the emitting quantum structures. The study has relevance especially for the development of mode-locked MECSELs by minimizing the impact of defective Fabry-Pérot micro-cavity effects due to reflections between the semiconductor gain structure and the two heat-spreader elements placed on each side of the semiconductor membrane.

Alkuperäiskieli	Englanti
Sivut	657-659
Sivumäärä	3
Julkaisu	IEEE Photonics Technology Letters
Vuosikerta	35
Numero	12
DOI - pysyväislinkit	https://doi.org/10.1109/LPT.2023.3270404
Tila	Julkaistu - 15 kesäk. 2023
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 2

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Pääsy asiakirjaan

10.1109/LPT.2023.3270404Lisenssi: CC BY

Effect_of_Non-Resonant_Gain_Structure_Design_in_Membrane_External-Cavity_Surface-Emitting_LasersFinal published version, 4,68 MBLisenssi: CC BY

https://urn.fi/URN:NBN:fi:tuni-202307257303Lisenssi: CC BY

Tampereen Mikroskopiakeskus
Vippola, M. (Manager), Honkanen, M. (Operator) & Salminen, T. (Operator)
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title = "Effect of Non-Resonant Gain Structure Design in Membrane External-Cavity Surface-Emitting Lasers",

abstract = "The operation of a semiconductor membrane external-cavity surface-emitting laser (MECSEL) employing a gain membrane with a cavity design, which is non-resonant regarding the two semiconductor-heat-spreader interfaces, is presented. The MECSEL delivers watt-level output power, in line with state-of-the-art results. The study provides new evidence that the design criteria of a MECSEL gain region are significantly relaxed compared to active regions employing distributed Bragg reflectors, for which the field distribution is set by the Bragg condition leading to tight tolerances for positioning of the emitting quantum structures. The study has relevance especially for the development of mode-locked MECSELs by minimizing the impact of defective Fabry-P{\'e}rot micro-cavity effects due to reflections between the semiconductor gain structure and the two heat-spreader elements placed on each side of the semiconductor membrane.",

keywords = "MECSEL, non-resonant, vertical emitter",

author = "Philipp Tatar-Mathes and Phung, {Hoy My} and Aaron Rogers and Patrik Rajala and Sanna Ranta and Mircea Guina and Hermann Kahle",

note = "Funding Information: This work was supported in part by the Academy of Finland under Grant 326455, in part by the Academy of Finland Flagship on Photonics Research and Innovation (PREIN) Program under Grant 320165, in part by the Horizon 2020 Marie Sk{\l}odowska-Curie Actions–Next Generation of Tunable LASers for Optical Coherence Tomography (NetLas) under Grant 860807, in part by the Magnus Ehrnrooth Foundation, and in part by the Finnish Foundation for Technology Promotion Publisher Copyright: {\textcopyright} 1989-2012 IEEE.",

year = "2023",

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day = "15",

doi = "10.1109/LPT.2023.3270404",

language = "English",

volume = "35",

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TY - JOUR

T1 - Effect of Non-Resonant Gain Structure Design in Membrane External-Cavity Surface-Emitting Lasers

AU - Tatar-Mathes, Philipp

AU - Phung, Hoy My

AU - Rogers, Aaron

AU - Rajala, Patrik

AU - Ranta, Sanna

AU - Guina, Mircea

AU - Kahle, Hermann

N1 - Funding Information: This work was supported in part by the Academy of Finland under Grant 326455, in part by the Academy of Finland Flagship on Photonics Research and Innovation (PREIN) Program under Grant 320165, in part by the Horizon 2020 Marie Skłodowska-Curie Actions–Next Generation of Tunable LASers for Optical Coherence Tomography (NetLas) under Grant 860807, in part by the Magnus Ehrnrooth Foundation, and in part by the Finnish Foundation for Technology Promotion Publisher Copyright: © 1989-2012 IEEE.

PY - 2023/6/15

Y1 - 2023/6/15

N2 - The operation of a semiconductor membrane external-cavity surface-emitting laser (MECSEL) employing a gain membrane with a cavity design, which is non-resonant regarding the two semiconductor-heat-spreader interfaces, is presented. The MECSEL delivers watt-level output power, in line with state-of-the-art results. The study provides new evidence that the design criteria of a MECSEL gain region are significantly relaxed compared to active regions employing distributed Bragg reflectors, for which the field distribution is set by the Bragg condition leading to tight tolerances for positioning of the emitting quantum structures. The study has relevance especially for the development of mode-locked MECSELs by minimizing the impact of defective Fabry-Pérot micro-cavity effects due to reflections between the semiconductor gain structure and the two heat-spreader elements placed on each side of the semiconductor membrane.

AB - The operation of a semiconductor membrane external-cavity surface-emitting laser (MECSEL) employing a gain membrane with a cavity design, which is non-resonant regarding the two semiconductor-heat-spreader interfaces, is presented. The MECSEL delivers watt-level output power, in line with state-of-the-art results. The study provides new evidence that the design criteria of a MECSEL gain region are significantly relaxed compared to active regions employing distributed Bragg reflectors, for which the field distribution is set by the Bragg condition leading to tight tolerances for positioning of the emitting quantum structures. The study has relevance especially for the development of mode-locked MECSELs by minimizing the impact of defective Fabry-Pérot micro-cavity effects due to reflections between the semiconductor gain structure and the two heat-spreader elements placed on each side of the semiconductor membrane.

KW - MECSEL

KW - non-resonant

KW - vertical emitter

U2 - 10.1109/LPT.2023.3270404

DO - 10.1109/LPT.2023.3270404

M3 - Article

AN - SCOPUS:85159707718

SN - 1041-1135

VL - 35

SP - 657

EP - 659

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Effect of Non-Resonant Gain Structure Design in Membrane External-Cavity Surface-Emitting Lasers

Abstrakti

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

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