Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Evan M. Cornuelle; Tyler A. Growden; David F. Storm; Elliott R. Brown; Weidong Zhang; Brian P. Downey; Vikrant Gokhale; Laura B. Ruppalt; James G. Champlain; Prudhvi Peri; Martha R. McCartney; David J. Smith; David J. Meyer; Paul R. Berger

doi:10.1063/5.0005062

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²

Evan M. Cornuelle, Tyler A. Growden, David F. Storm, Elliott R. Brown, Weidong Zhang, Brian P. Downey, Vikrant Gokhale, Laura B. Ruppalt, James G. Champlain, Prudhvi Peri, Martha R. McCartney, David J. Smith, David J. Meyer, Paul R. Berger

Tutkimustuotos: Artikkeli › Scientific › vertaisarvioitu

1 Sitaatiot (Scopus)

14 Lataukset (Pure)

Abstrakti

Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular beam epitaxy. Each sample displayed negative differential resistance (NDR) at room temperature. The figures-of-merit quantified were peak-to-valley current ratio (PVCR), yield of the device with room-temperature NDR, and peak current density (Jp). The figures-of-merit demonstrate an inverse relationship between PVCR/yield and Jp over this growth temperature series. X-ray diffraction and transmission electron microscopy were used to determine the growth rates, and layer thicknesses were used to explain the varying figures-of-merit. Due to the high yield of devices grown at 760 °C and 810 °C, the PVCR, peak voltage (Vp), and Jp were plotted vs device area, which demonstrated high uniformity and application tunability. Peak current densities of up to 1.01 MA/cm2 were observed for the sample grown at 900 °C.

Alkuperäiskieli	Englanti
Artikkeli	055307
Julkaisu	AIP Advances
Vuosikerta	10
Numero	5
DOI - pysyväislinkit	https://doi.org/10.1063/5.0005062
Tila	Julkaistu - 1 toukok. 2020
Julkaistu ulkoisesti	Kyllä
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Physics and Astronomy(all)

Pääsy asiakirjaan

10.1063/5.0005062Lisenssi: CC BY

5.0005062 Effects of growth temperature on electrical properties of GaN_AlN based resonant tunneling diodes
CC BY
Final published version, 3,51 MBLisenssi: CC BY

http://urn.fi/URN:NBN:fi:tuni-202101041020Lisenssi: CC BY

Siteeraa tätä

Cornuelle, E. M., Growden, T. A., Storm, D. F., Brown, E. R., Zhang, W., Downey, B. P., Gokhale, V., Ruppalt, L. B., Champlain, J. G., Peri, P., McCartney, M. R., Smith, D. J., Meyer, D. J., & Berger, P. R. (2020). Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm². AIP Advances, 10(5), [055307]. https://doi.org/10.1063/5.0005062

@article{d4f4ccd2a9d84f52b9ab2ad996567155,

title = "Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2",

abstract = "Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular beam epitaxy. Each sample displayed negative differential resistance (NDR) at room temperature. The figures-of-merit quantified were peak-to-valley current ratio (PVCR), yield of the device with room-temperature NDR, and peak current density (Jp). The figures-of-merit demonstrate an inverse relationship between PVCR/yield and Jp over this growth temperature series. X-ray diffraction and transmission electron microscopy were used to determine the growth rates, and layer thicknesses were used to explain the varying figures-of-merit. Due to the high yield of devices grown at 760 °C and 810 °C, the PVCR, peak voltage (Vp), and Jp were plotted vs device area, which demonstrated high uniformity and application tunability. Peak current densities of up to 1.01 MA/cm2 were observed for the sample grown at 900 °C. ",

author = "Cornuelle, {Evan M.} and Growden, {Tyler A.} and Storm, {David F.} and Brown, {Elliott R.} and Weidong Zhang and Downey, {Brian P.} and Vikrant Gokhale and Ruppalt, {Laura B.} and Champlain, {James G.} and Prudhvi Peri and McCartney, {Martha R.} and Smith, {David J.} and Meyer, {David J.} and Berger, {Paul R.}",

note = "Funding Information: This work was supported by NSF Collaborative Grant Nos. ECCS-1711731 and ECCS-1711733 (Program Director: Dr. Dimitris Pavlidis) and the Office of Naval Research. The use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University is gratefully acknowledged. Publisher Copyright: {\textcopyright} 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2020",

month = may,

day = "1",

doi = "10.1063/5.0005062",

language = "English",

volume = "10",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "5",

}

Cornuelle, EM, Growden, TA, Storm, DF, Brown, ER, Zhang, W, Downey, BP, Gokhale, V, Ruppalt, LB, Champlain, JG, Peri, P, McCartney, MR, Smith, DJ, Meyer, DJ & Berger, PR 2020, 'Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²', AIP Advances, Vuosikerta 10, Nro 5, 055307. https://doi.org/10.1063/5.0005062

TY - JOUR

T1 - Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

AU - Cornuelle, Evan M.

AU - Growden, Tyler A.

AU - Storm, David F.

AU - Brown, Elliott R.

AU - Zhang, Weidong

AU - Downey, Brian P.

AU - Gokhale, Vikrant

AU - Ruppalt, Laura B.

AU - Champlain, James G.

AU - Peri, Prudhvi

AU - McCartney, Martha R.

AU - Smith, David J.

AU - Meyer, David J.

AU - Berger, Paul R.

N1 - Funding Information: This work was supported by NSF Collaborative Grant Nos. ECCS-1711731 and ECCS-1711733 (Program Director: Dr. Dimitris Pavlidis) and the Office of Naval Research. The use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University is gratefully acknowledged. Publisher Copyright: © 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular beam epitaxy. Each sample displayed negative differential resistance (NDR) at room temperature. The figures-of-merit quantified were peak-to-valley current ratio (PVCR), yield of the device with room-temperature NDR, and peak current density (Jp). The figures-of-merit demonstrate an inverse relationship between PVCR/yield and Jp over this growth temperature series. X-ray diffraction and transmission electron microscopy were used to determine the growth rates, and layer thicknesses were used to explain the varying figures-of-merit. Due to the high yield of devices grown at 760 °C and 810 °C, the PVCR, peak voltage (Vp), and Jp were plotted vs device area, which demonstrated high uniformity and application tunability. Peak current densities of up to 1.01 MA/cm2 were observed for the sample grown at 900 °C.

AB - Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular beam epitaxy. Each sample displayed negative differential resistance (NDR) at room temperature. The figures-of-merit quantified were peak-to-valley current ratio (PVCR), yield of the device with room-temperature NDR, and peak current density (Jp). The figures-of-merit demonstrate an inverse relationship between PVCR/yield and Jp over this growth temperature series. X-ray diffraction and transmission electron microscopy were used to determine the growth rates, and layer thicknesses were used to explain the varying figures-of-merit. Due to the high yield of devices grown at 760 °C and 810 °C, the PVCR, peak voltage (Vp), and Jp were plotted vs device area, which demonstrated high uniformity and application tunability. Peak current densities of up to 1.01 MA/cm2 were observed for the sample grown at 900 °C.

U2 - 10.1063/5.0005062

DO - 10.1063/5.0005062

M3 - Article

AN - SCOPUS:85092027492

SN - 2158-3226

VL - 10

JO - AIP Advances

JF - AIP Advances

IS - 5

M1 - 055307

ER -