Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells

Emil-Mihai Pavelescu; Ville Polojärvi; Andreas Schramm; Antti Tukiainen; Arto Aho; Wenxin Zhang; Janne Puustinen; Joel Salmi; Mircea Guina

doi:10.1016/j.optmat.2015.12.035

Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells

Emil-Mihai Pavelescu, Ville Polojärvi, Andreas Schramm, Antti Tukiainen, Arto Aho, Wenxin Zhang, Janne Puustinen, Joel Salmi, Mircea Guina

Tutkimustuotos: Artikkeli › Scientific › vertaisarvioitu

7 Sitaatiot (Scopus)

Abstrakti

We report study on stacked InAs/GaNAs quantum dots heterostructures with dilute nitride GaInNAs strain mediating layers embedded in GaAs p-i-n solar cell structure. The insertion of GaInNAs strain mediating layers in the vicinity of the strain compensated InAs/GaNAs quantum dots heterostructures enhances their surface density, improves and significantly red shifts their light emission. Embedding a stack of the strain-mediated InAs/GaInNAs/GaNAs quantum dots in the i region of a GaAs p-i-n solar cell leads also to a red shift of the absorption edge of the solar cells and improves the solar cell photogenerated currents at longer wavelengths beyond 1200 nm.

Alkuperäiskieli	Englanti
Sivut	177-180
Sivumäärä	4
Julkaisu	Optical Materials
Vuosikerta	52
DOI - pysyväislinkit	https://doi.org/10.1016/j.optmat.2015.12.035
Tila	Julkaistu - 1 helmik. 2016
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Computer Science(all)

Pääsy asiakirjaan

10.1016/j.optmat.2015.12.035

Siteeraa tätä

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title = "Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells",

abstract = "We report study on stacked InAs/GaNAs quantum dots heterostructures with dilute nitride GaInNAs strain mediating layers embedded in GaAs p-i-n solar cell structure. The insertion of GaInNAs strain mediating layers in the vicinity of the strain compensated InAs/GaNAs quantum dots heterostructures enhances their surface density, improves and significantly red shifts their light emission. Embedding a stack of the strain-mediated InAs/GaInNAs/GaNAs quantum dots in the i region of a GaAs p-i-n solar cell leads also to a red shift of the absorption edge of the solar cells and improves the solar cell photogenerated currents at longer wavelengths beyond 1200 nm.",

keywords = "Dilute nitrides, Molecular beam epitaxy, Optical properties",

author = "Emil-Mihai Pavelescu and Ville Poloj{\"a}rvi and Andreas Schramm and Antti Tukiainen and Arto Aho and Wenxin Zhang and Janne Puustinen and Joel Salmi and Mircea Guina",

note = "EXT={"}Pavelescu, Emil-Mihai{"}",

year = "2016",

month = feb,

day = "1",

doi = "10.1016/j.optmat.2015.12.035",

language = "English",

volume = "52",

pages = "177--180",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells

AU - Pavelescu, Emil-Mihai

AU - Polojärvi, Ville

AU - Schramm, Andreas

AU - Tukiainen, Antti

AU - Aho, Arto

AU - Zhang, Wenxin

AU - Puustinen, Janne

AU - Salmi, Joel

AU - Guina, Mircea

N1 - EXT="Pavelescu, Emil-Mihai"

PY - 2016/2/1

Y1 - 2016/2/1

N2 - We report study on stacked InAs/GaNAs quantum dots heterostructures with dilute nitride GaInNAs strain mediating layers embedded in GaAs p-i-n solar cell structure. The insertion of GaInNAs strain mediating layers in the vicinity of the strain compensated InAs/GaNAs quantum dots heterostructures enhances their surface density, improves and significantly red shifts their light emission. Embedding a stack of the strain-mediated InAs/GaInNAs/GaNAs quantum dots in the i region of a GaAs p-i-n solar cell leads also to a red shift of the absorption edge of the solar cells and improves the solar cell photogenerated currents at longer wavelengths beyond 1200 nm.

AB - We report study on stacked InAs/GaNAs quantum dots heterostructures with dilute nitride GaInNAs strain mediating layers embedded in GaAs p-i-n solar cell structure. The insertion of GaInNAs strain mediating layers in the vicinity of the strain compensated InAs/GaNAs quantum dots heterostructures enhances their surface density, improves and significantly red shifts their light emission. Embedding a stack of the strain-mediated InAs/GaInNAs/GaNAs quantum dots in the i region of a GaAs p-i-n solar cell leads also to a red shift of the absorption edge of the solar cells and improves the solar cell photogenerated currents at longer wavelengths beyond 1200 nm.

KW - Dilute nitrides

KW - Molecular beam epitaxy

KW - Optical properties

U2 - 10.1016/j.optmat.2015.12.035

DO - 10.1016/j.optmat.2015.12.035

M3 - Article

AN - SCOPUS:84959293536

VL - 52

SP - 177

EP - 180

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

ER -

Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells

Abstrakti

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä