Electrical switching of photoluminescence of single site-controlled InAs quantum dots

A. Schramm; E. Koski; J. M. Kontio; J. Tommila; T. V. Hakkarainen; D. Lupo; M. Guina

doi:10.1049/el.2016.0502

Electrical switching of photoluminescence of single site-controlled InAs quantum dots

A. Schramm
, E. Koski
, J. M. Kontio^*
, J. Tommila
, T. V. Hakkarainen
, D. Lupo
, M. Guina

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.

Alkuperäiskieli	Englanti
Sivut	1240-1242
Sivumäärä	3
Julkaisu	Electronics Letters
Vuosikerta	52
Numero	14
DOI - pysyväislinkit	https://doi.org/10.1049/el.2016.0502
Tila	Julkaistu - 7 heinäk. 2016
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Electrical and Electronic Engineering

Pääsy asiakirjaan

10.1049/el.2016.0502

Siteeraa tätä

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title = "Electrical switching of photoluminescence of single site-controlled InAs quantum dots",

abstract = "Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.",

author = "A. Schramm and E. Koski and Kontio, \{J. M.\} and J. Tommila and Hakkarainen, \{T. V.\} and D. Lupo and M. Guina",

year = "2016",

month = jul,

day = "7",

doi = "10.1049/el.2016.0502",

language = "English",

volume = "52",

pages = "1240--1242",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons",

number = "14",

}

TY - JOUR

T1 - Electrical switching of photoluminescence of single site-controlled InAs quantum dots

AU - Schramm, A.

AU - Koski, E.

AU - Kontio, J. M.

AU - Tommila, J.

AU - Hakkarainen, T. V.

AU - Lupo, D.

AU - Guina, M.

PY - 2016/7/7

Y1 - 2016/7/7

N2 - Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.

AB - Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.

U2 - 10.1049/el.2016.0502

DO - 10.1049/el.2016.0502

M3 - Article

AN - SCOPUS:84976650045

SN - 0013-5194

VL - 52

SP - 1240

EP - 1242

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Electrical switching of photoluminescence of single site-controlled InAs quantum dots

Abstrakti

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä