Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

Tyler A. Growden; E. R. Brown; Weidong Zhang; Ravi Droopad; Paul R. Berger

doi:10.1063/1.4933258

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

Tyler A. Growden
, E. R. Brown
, Weidong Zhang
, Ravi Droopad
, Paul R. Berger^*

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

8 Sitaatiot (Scopus)

Abstrakti

An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In_0.53Ga_0.47As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%-90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

Alkuperäiskieli	Englanti
Artikkeli	153506
Julkaisu	Applied Physics Letters
Vuosikerta	107
Numero	15
DOI - pysyväislinkit	https://doi.org/10.1063/1.4933258
Tila	Julkaistu - 12 lokak. 2015
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

!!ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4933258

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title = "Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time",

abstract = "An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In0.53Ga0.47As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10\%-90\% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.",

author = "Growden, \{Tyler A.\} and Brown, \{E. R.\} and Weidong Zhang and Ravi Droopad and Berger, \{Paul R.\}",

year = "2015",

month = oct,

day = "12",

doi = "10.1063/1.4933258",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

AU - Growden, Tyler A.

AU - Brown, E. R.

AU - Zhang, Weidong

AU - Droopad, Ravi

AU - Berger, Paul R.

PY - 2015/10/12

Y1 - 2015/10/12

N2 - An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In0.53Ga0.47As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%-90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

AB - An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In0.53Ga0.47As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%-90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

U2 - 10.1063/1.4933258

DO - 10.1063/1.4933258

M3 - Article

AN - SCOPUS:84944394487

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153506

ER -

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

Abstrakti

!!ASJC Scopus subject areas

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