TY - JOUR
T1 - Experimental Verification of Single-Type Electron Population in Indium Tin Oxide Layers
AU - Złotnik, Sebastian
AU - Pianelli, Alessandro
AU - Boguski, Jacek
AU - Kojdecki, Marek A.
AU - Moszczyński, Paweł
AU - Parka, Janusz
AU - Wróbel, Jarosław
N1 - Funding Information:
This research was primarily conducted with the financial support under the program of the Minister of Science and Higher Education (Poland): “Regional Excellence Initiative” in 2019–2022; project number 014/RID/14 2018/19, funding amount of PLN 4 589 200.00 (rid.wtc.wat.edu.pl). A.P. individually acknowledges the Polish National Agency for Academic Exchange (NAWA), and the Instituto Polacco di Roma in the framework of exchange programme for students and scientists as part of bilateral cooperation Italy‐Poland 2021–2022 granted by no. BPN/FRC/2021/1/00008/U/01. A.P. also acknowledges the European Social under the “Operational Programme knowledge Education Development 2014–2020”.
Publisher Copyright:
© 2022 The Authors. physica status solidi (RRL) Rapid Research Letters published by Wiley-VCH GmbH.
PY - 2022/8
Y1 - 2022/8
N2 - Accurate determination of electronic transport properties of individual transparent conductive oxide layers, namely indium tin oxide (ITO), is essential for further development and design of photonic devices with ITO layer as a tunable ultrafast optoelectronic component. Precise magnetotransport measurements are here implemented to achieve carrier mobility distribution that gives insight into types and characteristics of carrier species. ITO thin films with various sheet resistance of ≈10, 75, and 350 Ω sq−1, respectively, are examined at near-room temperature. Unimodal mobility distribution is revealed in ITO films, independently on their resistivity, with no evidence of unseparated contributions from surface or interface states. The electron mobility varies depending on ITO's resistivity, ranging from 36.8 to 47.2 cm2 V−1 s−1 at 300 K. Importantly, no minority hole conduction is present. The ITO thin films exhibit solely bulk-like conduction with an absence of parallel conductions. In addition, the existence of single-type electron population in ITO that can be viewed as an important validation of exclusively donor-type defects and/or impurities contributing to total ITO conductivity is experimentally confirmed. These results indicate that ITO can be viewed as an integrated counterpart for photonic metadevices.
AB - Accurate determination of electronic transport properties of individual transparent conductive oxide layers, namely indium tin oxide (ITO), is essential for further development and design of photonic devices with ITO layer as a tunable ultrafast optoelectronic component. Precise magnetotransport measurements are here implemented to achieve carrier mobility distribution that gives insight into types and characteristics of carrier species. ITO thin films with various sheet resistance of ≈10, 75, and 350 Ω sq−1, respectively, are examined at near-room temperature. Unimodal mobility distribution is revealed in ITO films, independently on their resistivity, with no evidence of unseparated contributions from surface or interface states. The electron mobility varies depending on ITO's resistivity, ranging from 36.8 to 47.2 cm2 V−1 s−1 at 300 K. Importantly, no minority hole conduction is present. The ITO thin films exhibit solely bulk-like conduction with an absence of parallel conductions. In addition, the existence of single-type electron population in ITO that can be viewed as an important validation of exclusively donor-type defects and/or impurities contributing to total ITO conductivity is experimentally confirmed. These results indicate that ITO can be viewed as an integrated counterpart for photonic metadevices.
KW - electron conduction
KW - Hall effects
KW - indium tin oxide
KW - mobility spectra
KW - transparent conductors
U2 - 10.1002/pssr.202200170
DO - 10.1002/pssr.202200170
M3 - Article
AN - SCOPUS:85133309596
SN - 1862-6254
VL - 16
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 8
M1 - 2200170
ER -