Experimentally defined electronic properties of InGaAsN: input for solar cell simulations

Natalia Lebedeva; Päivikki Repo; Marko Yli-Koski; Hele Savin; Arto Aho; Antti Tukiainen; Mircea Guina; Miklos Tallian; Sasha Savtchouk

doi:10.4229/26thEUPVSEC2011-1DV.4.4

Experimentally defined electronic properties of InGaAsN: input for solar cell simulations

Julkaisun otsikon käännös: Experimentally defined electronic properties of InGaAsN: input for solar cell simulations

Natalia Lebedeva
, Päivikki Repo
, Marko Yli-Koski
, Hele Savin
, Arto Aho
, Antti Tukiainen
, Mircea Guina
, Miklos Tallian
, Sasha Savtchouk

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

Julkaisun otsikon käännös	Experimentally defined electronic properties of InGaAsN: input for solar cell simulations
Alkuperäiskieli	Englanti
Otsikko	EU PVSEC 2011, 26th European Photovoltaic Solar Energy Conference and Exhibition, September 5 - 9, 2011, Hamburg, Germany
Julkaisupaikka	Hamburg
Kustantaja	EU PVSEC
Sivut	621-624
ISBN (painettu)	3-936338-27-2
DOI - pysyväislinkit	https://doi.org/10.4229/26thEUPVSEC2011-1DV.4.4
Tila	Julkaistu - 2011
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa

Julkaisusarja

Nimi	European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC
Kustantaja	EU PVSEC

Julkaisufoorumi-taso

Ei tasoa

Pääsy asiakirjaan

10.4229/26thEUPVSEC2011-1DV.4.4

Siteeraa tätä

Lebedeva, N., Repo, P., Yli-Koski, M., Savin, H., Aho, A., Tukiainen, A., Guina, M., Tallian, M., & Savtchouk, S. (2011). Experimentally defined electronic properties of InGaAsN: input for solar cell simulations. teoksessa EU PVSEC 2011, 26th European Photovoltaic Solar Energy Conference and Exhibition, September 5 - 9, 2011, Hamburg, Germany (Sivut 621-624). (European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC). EU PVSEC. https://doi.org/10.4229/26thEUPVSEC2011-1DV.4.4

Lebedeva, Natalia ; Repo, Päivikki ; Yli-Koski, Marko et al. / Experimentally defined electronic properties of InGaAsN: input for solar cell simulations. EU PVSEC 2011, 26th European Photovoltaic Solar Energy Conference and Exhibition, September 5 - 9, 2011, Hamburg, Germany. Hamburg : EU PVSEC, 2011. Sivut 621-624 (European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC).

@inproceedings{92bc0fbd2fad457d9d3c27d5240982ac,

title = "Experimentally defined electronic properties of InGaAsN: input for solar cell simulations",

author = "Natalia Lebedeva and P{\"a}ivikki Repo and Marko Yli-Koski and Hele Savin and Arto Aho and Antti Tukiainen and Mircea Guina and Miklos Tallian and Sasha Savtchouk",

note = "Poster 1DV.1.7. ei ut-numeroa 29.3.2014<br/>Contribution: organisation=orc,FACT1=1",

year = "2011",

doi = "10.4229/26thEUPVSEC2011-1DV.4.4",

language = "English",

isbn = "3-936338-27-2",

series = "European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC",

publisher = "EU PVSEC",

pages = "621--624",

booktitle = "EU PVSEC 2011, 26th European Photovoltaic Solar Energy Conference and Exhibition, September 5 - 9, 2011, Hamburg, Germany",

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Lebedeva, N, Repo, P, Yli-Koski, M, Savin, H, Aho, A, Tukiainen, A , Guina, M, Tallian, M & Savtchouk, S 2011, Experimentally defined electronic properties of InGaAsN: input for solar cell simulations. julkaisussa EU PVSEC 2011, 26th European Photovoltaic Solar Energy Conference and Exhibition, September 5 - 9, 2011, Hamburg, Germany. European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC, EU PVSEC, Hamburg, Sivut 621-624. https://doi.org/10.4229/26thEUPVSEC2011-1DV.4.4

Experimentally defined electronic properties of InGaAsN: input for solar cell simulations. / Lebedeva, Natalia; Repo, Päivikki; Yli-Koski, Marko et al.
EU PVSEC 2011, 26th European Photovoltaic Solar Energy Conference and Exhibition, September 5 - 9, 2011, Hamburg, Germany. Hamburg: EU PVSEC, 2011. s. 621-624 (European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC).

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

TY - GEN

T1 - Experimentally defined electronic properties of InGaAsN: input for solar cell simulations

AU - Lebedeva, Natalia

AU - Repo, Päivikki

AU - Yli-Koski, Marko

AU - Savin, Hele

AU - Aho, Arto

AU - Tukiainen, Antti

AU - Guina, Mircea

AU - Tallian, Miklos

AU - Savtchouk, Sasha

N1 - Poster 1DV.1.7. ei ut-numeroa 29.3.2014<br/>Contribution: organisation=orc,FACT1=1

PY - 2011

Y1 - 2011

U2 - 10.4229/26thEUPVSEC2011-1DV.4.4

DO - 10.4229/26thEUPVSEC2011-1DV.4.4

M3 - Conference contribution

SN - 3-936338-27-2

T3 - European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC

SP - 621

EP - 624

BT - EU PVSEC 2011, 26th European Photovoltaic Solar Energy Conference and Exhibition, September 5 - 9, 2011, Hamburg, Germany

PB - EU PVSEC

CY - Hamburg

ER -

Lebedeva N, Repo P, Yli-Koski M, Savin H, Aho A, Tukiainen A et al. Experimentally defined electronic properties of InGaAsN: input for solar cell simulations. julkaisussa EU PVSEC 2011, 26th European Photovoltaic Solar Energy Conference and Exhibition, September 5 - 9, 2011, Hamburg, Germany. Hamburg: EU PVSEC. 2011. s. 621-624. (European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC). doi: 10.4229/26thEUPVSEC2011-1DV.4.4