Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes

T. A. Growden, E. R. Brown, P. R. Berger, D. F. Storm, D. J. Meyer

Tutkimustuotos: Luku › Tieteellinen › vertaisarvioitu

60 Lataukset (Pure)

Alkuperäiskieli	Englanti
Otsikko	High-Frequency GaN Electronic Devices
Kustantaja	Springer International Publishing
Sivut	249-281
Sivumäärä	33
ISBN (elektroninen)	978-3-030-20208-8
DOI - pysyväislinkit	https://doi.org/10.1007/978-3-030-20208-8_9
Tila	Julkaistu - 2020
OKM-julkaisutyyppi	A3 Kirjan tai muun kokoomateoksen osa

Julkaisufoorumi-taso

fabrication and characterization
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@inbook{0633b878a09b45728d5f3bd293e688d0,

title = "Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes",

author = "Growden, \{T. A.\} and Brown, \{E. R.\} and Berger, \{P. R.\} and Storm, \{D. F.\} and Meyer, \{D. J.\}",

year = "2020",

doi = "10.1007/978-3-030-20208-8\_9",

language = "English",

pages = "249--281",

booktitle = "High-Frequency GaN Electronic Devices",

publisher = "Springer International Publishing",

}

TY - CHAP

T1 - Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes

AU - Growden, T. A.

AU - Brown, E. R.

AU - Berger, P. R.

AU - Storm, D. F.

AU - Meyer, D. J.

PY - 2020

Y1 - 2020

U2 - 10.1007/978-3-030-20208-8_9

DO - 10.1007/978-3-030-20208-8_9

M3 - Chapter

SP - 249

EP - 281

BT - High-Frequency GaN Electronic Devices

PB - Springer International Publishing

ER -