First-principles study of nitrogen in GaAsN - Defects and Interfaces

Keyphrases

• Gallium Arsenide 100%
• GaAsN 100%
• First-principles Study 100%
• Material Properties 50%
• Dilute Nitrides 50%
• Computational Study 50%
• InGaAsN 50%
• Nitrogen Concentration 50%
• Interstitial Nitrogen 50%
• Alloy Concentration 50%
• Density Functional Theory 25%
• Growth Conditions 25%
• Transistor 25%
• Semiconductors 25%
• Competitive Environment 25%
• Solar Cell 25%
• Modernity 25%
• Solid-state Laser 25%
• Raman Spectra 25%
• Material Component 25%
• Beryllium 25%
• First-principles Method 25%
• P-type 25%
• Computational Physics 25%
• Strong Nonlinear 25%
• Nitrogen Effect 25%
• Unknown Materials 25%
• Semiconductor Devices 25%
• Semiconductor Technology 25%
• Isolated Defect 25%
• Long History 25%
• Nitrogen Defects 25%
• Alloying Effect 25%
• Rapid Progress 25%
• Carrier Compensation 25%
• Nitrogen-alloyed 25%
• Beryllium Doping 25%
• Resonance States 25%
• Band Gap Reduction 25%
• Optoelectronic Components 25%
• Indium 25%
• Doping Effect 25%
• Nonlinear Dependence 25%
• Physical Concepts 25%
• Materials Research 25%
• Empirical Parameters 25%
• Energy Conditions 25%
• Computational Results 25%
• Local Geometry 25%
• Valence Band Offset 25%
• Vibrational Modes 25%
• Long-range Interactions 25%
• Fermi Energy 25%
• Practical Devices 25%
• Quantitative Value 25%
• Computer chips 25%

Material Science

• Gallium Arsenide 100%
• Silicon 50%
• Complex System 50%
• Nitride Compound 50%
• Beryllium 50%
• Materials Property 50%
• Density 25%
• Alloying 25%
• Transistor 25%
• Solar Cell 25%
• Indium 25%
• Semiconductor Device 25%
• Band Offset 25%
• Solid-State Laser 25%