Frequency-doubled passively Q-switched microchip laser producing 225 ps pulses at 671 nm

Jari Nikkinen; Ville-Markus Korpijärvi; Iiro Leino; Antti Härkönen; Mircea Guina

doi:10.1364/OL.41.005385

Frequency-doubled passively Q-switched microchip laser producing 225 ps pulses at 671 nm

Jari Nikkinen^*
, Ville-Markus Korpijärvi
, Iiro Leino
, Antti Härkönen
, Mircea Guina

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

3 Sitaatiot (Scopus)

Abstrakti

We report a 671 nm laser source emitting 225 ps pulses with an average power of 55 mW and a repetition rate of 444 kHz. The system consists of a 1342 nm SESAM Q-switched Nd:YVO₄ microchip master oscillator and a dual-stage Nd:YVO₄ power amplifier. The 1342 nm signal was frequency-doubled to 671 nm using a periodically poled lithium niobate crystal. This laser source provides a practical alternative for applications requiring high energy picosecond pulses, such as time-gated Raman spectroscopy.

Alkuperäiskieli	Englanti
Sivut	5385-5388
Sivumäärä	4
Julkaisu	Optics Letters
Vuosikerta	41
Numero	22
DOI - pysyväislinkit	https://doi.org/10.1364/OL.41.005385
Tila	Julkaistu - 15 marrask. 2016
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 2

!!ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Pääsy asiakirjaan

10.1364/OL.41.005385

Siteeraa tätä

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title = "Frequency-doubled passively Q-switched microchip laser producing 225 ps pulses at 671 nm",

abstract = "We report a 671 nm laser source emitting 225 ps pulses with an average power of 55 mW and a repetition rate of 444 kHz. The system consists of a 1342 nm SESAM Q-switched Nd:YVO4 microchip master oscillator and a dual-stage Nd:YVO4 power amplifier. The 1342 nm signal was frequency-doubled to 671 nm using a periodically poled lithium niobate crystal. This laser source provides a practical alternative for applications requiring high energy picosecond pulses, such as time-gated Raman spectroscopy.",

author = "Jari Nikkinen and Ville-Markus Korpij{\"a}rvi and Iiro Leino and Antti H{\"a}rk{\"o}nen and Mircea Guina",

year = "2016",

month = nov,

day = "15",

doi = "10.1364/OL.41.005385",

language = "English",

volume = "41",

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journal = "Optics Letters",

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T1 - Frequency-doubled passively Q-switched microchip laser producing 225 ps pulses at 671 nm

AU - Nikkinen, Jari

AU - Korpijärvi, Ville-Markus

AU - Leino, Iiro

AU - Härkönen, Antti

AU - Guina, Mircea

PY - 2016/11/15

Y1 - 2016/11/15

N2 - We report a 671 nm laser source emitting 225 ps pulses with an average power of 55 mW and a repetition rate of 444 kHz. The system consists of a 1342 nm SESAM Q-switched Nd:YVO4 microchip master oscillator and a dual-stage Nd:YVO4 power amplifier. The 1342 nm signal was frequency-doubled to 671 nm using a periodically poled lithium niobate crystal. This laser source provides a practical alternative for applications requiring high energy picosecond pulses, such as time-gated Raman spectroscopy.

AB - We report a 671 nm laser source emitting 225 ps pulses with an average power of 55 mW and a repetition rate of 444 kHz. The system consists of a 1342 nm SESAM Q-switched Nd:YVO4 microchip master oscillator and a dual-stage Nd:YVO4 power amplifier. The 1342 nm signal was frequency-doubled to 671 nm using a periodically poled lithium niobate crystal. This laser source provides a practical alternative for applications requiring high energy picosecond pulses, such as time-gated Raman spectroscopy.

U2 - 10.1364/OL.41.005385

DO - 10.1364/OL.41.005385

M3 - Article

AN - SCOPUS:84995663953

SN - 0146-9592

VL - 41

SP - 5385

EP - 5388

JO - Optics Letters

JF - Optics Letters

IS - 22

ER -

Frequency-doubled passively Q-switched microchip laser producing 225 ps pulses at 671 nm

Abstrakti

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

Sormenjälki

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