Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W

Emmi Kantola; Tomi Leinonen; Antti Rantamäki; Mircea Guina; Alexei Sirbu; Vladimir Iakovlev

doi:10.1364/CLEO_AT.2018.JTu2A.10

Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W

Emmi Kantola, Tomi Leinonen, Antti Rantamäki, Mircea Guina, Alexei Sirbu, Vladimir Iakovlev

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.

Alkuperäiskieli	Englanti
Otsikko	CLEO
Alaotsikko	Applications and Technology, CLEO_AT 2018
Kustantaja	OSA - The Optical Society
ISBN (elektroninen)	9781557528209
DOI - pysyväislinkit	https://doi.org/10.1364/CLEO_AT.2018.JTu2A.10
Tila	Julkaistu - 2018
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	CONFERENCE ON LASERS AND ELECTRO-OPTICS - Kesto: 1 tammik. 1900 → …

Conference

Conference	CONFERENCE ON LASERS AND ELECTRO-OPTICS
Ajanjakso	1/01/00 → …

Julkaisufoorumi-taso

Jufo-taso 0

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Pääsy asiakirjaan

10.1364/CLEO_AT.2018.JTu2A.10

Siteeraa tätä

@inproceedings{b10fcab729e9447496480f44f3ee001f,

title = "Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W",

abstract = "We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.",

author = "Emmi Kantola and Tomi Leinonen and Antti Rantam{\"a}ki and Mircea Guina and Alexei Sirbu and Vladimir Iakovlev",

year = "2018",

doi = "10.1364/CLEO_AT.2018.JTu2A.10",

language = "English",

booktitle = "CLEO",

publisher = "OSA - The Optical Society",

note = "CONFERENCE ON LASERS AND ELECTRO-OPTICS ; Conference date: 01-01-1900",

}

TY - GEN

T1 - Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W

AU - Kantola, Emmi

AU - Leinonen, Tomi

AU - Rantamäki, Antti

AU - Guina, Mircea

AU - Sirbu, Alexei

AU - Iakovlev, Vladimir

PY - 2018

Y1 - 2018

N2 - We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.

AB - We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.

U2 - 10.1364/CLEO_AT.2018.JTu2A.10

DO - 10.1364/CLEO_AT.2018.JTu2A.10

M3 - Conference contribution

AN - SCOPUS:85049146963

BT - CLEO

PB - OSA - The Optical Society

T2 - CONFERENCE ON LASERS AND ELECTRO-OPTICS

Y2 - 1 January 1900

ER -

Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W

Abstrakti

Conference

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä