Abstrakti
Achieving strong absorption of low-energy photons is one of the key issues to demonstrate quantum dot solar cells working in the intermediate band regime at practical concentration factors and operating temperatures. Guided-mode resonance effects may enable large enhancement of quantum dot intraband optical transitions. We propose quantum dot thin-film cells designed to have significant field waveguiding in the quantum dot stack region and patterned at the rear-side with a sub-wavelength diffraction grating. Remarkable increase of the optical path length at mid-infrared wavelengths is shown owing to guided-mode resonances. Design guidelines are presented for energy and strength of the second-photon absorption for III-V quantum dots, such as InAs/GaAs and GaSb/GaAs, whose intraband and intersubband transitions roughly extends over the 2-8 μm range. The proposed design can also be applied to quantum dot infrared detectors. Angle-selectivity is discussed in view of applications in concentrator photovoltaic systems and infrared imaging systems.
Alkuperäiskieli | Englanti |
---|---|
Sivut | A352-A359 |
Julkaisu | Optics Express |
Vuosikerta | 26 |
Numero | 6 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 19 maalisk. 2018 |
OKM-julkaisutyyppi | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä |
Julkaisufoorumi-taso
- Jufo-taso 2
!!ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics