High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

Antti Tukiainen; Arto Aho; Gabriele Gori; Ville Polojärvi; Mariacristina Casale; Erminio Greco; Riku Isoaho; Timo Aho; Marianna Raappana; Roberta Campesato; Mircea Guina

doi:10.1002/pip.2784

High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

Antti Tukiainen, Arto Aho, Gabriele Gori, Ville Polojärvi, Mariacristina Casale, Erminio Greco, Riku Isoaho, Timo Aho, Marianna Raappana, Roberta Campesato, Mircea Guina

Tutkimustuotos: Artikkeli › Scientific › vertaisarvioitu

27 Sitaatiot (Scopus)

Abstrakti

Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efﬁciency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was ﬁrst grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efﬁciency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efﬁciency tandem solar cells with three or more junctions.

Alkuperäiskieli	Englanti
Artikkeli	PIP2784
Sivut	914-919
Sivumäärä	6
Julkaisu	Progress in Photovoltaics: Research and Applications
Vuosikerta	24
Numero	7
DOI - pysyväislinkit	https://doi.org/10.1002/pip.2784
Tila	Julkaistu - 17 kesäk. 2016
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 2

Pääsy asiakirjaan

10.1002/pip.2784

Siteeraa tätä

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title = "High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique",

abstract = "Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efﬁciency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was ﬁrst grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efﬁciency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efﬁciency tandem solar cells with three or more junctions.",

keywords = "multijunction solar cells, molecular beam epitaxy, metal-organic chemical vapor deposition, dilute nitride semiconductors",

author = "Antti Tukiainen and Arto Aho and Gabriele Gori and Ville Poloj{\"a}rvi and Mariacristina Casale and Erminio Greco and Riku Isoaho and Timo Aho and Marianna Raappana and Roberta Campesato and Mircea Guina",

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doi = "10.1002/pip.2784",

language = "English",

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issn = "1062-7995",

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TY - JOUR

T1 - High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

AU - Tukiainen, Antti

AU - Aho, Arto

AU - Gori, Gabriele

AU - Polojärvi, Ville

AU - Casale, Mariacristina

AU - Greco, Erminio

AU - Isoaho, Riku

AU - Aho, Timo

AU - Raappana, Marianna

AU - Campesato, Roberta

AU - Guina, Mircea

N1 - INT=orc,"Isoaho, Riku"

PY - 2016/6/17

Y1 - 2016/6/17

N2 - Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efﬁciency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was ﬁrst grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efﬁciency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efﬁciency tandem solar cells with three or more junctions.

AB - Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efﬁciency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was ﬁrst grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efﬁciency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efﬁciency tandem solar cells with three or more junctions.

KW - multijunction solar cells

KW - molecular beam epitaxy

KW - metal-organic chemical vapor deposition

KW - dilute nitride semiconductors

U2 - 10.1002/pip.2784

DO - 10.1002/pip.2784

M3 - Article

VL - 24

SP - 914

EP - 919

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

SN - 1062-7995

IS - 7

M1 - PIP2784

ER -

High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

Abstrakti

Julkaisufoorumi-taso

Pääsy asiakirjaan

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