High efficiency dilute nitride solar cells: Simulations meet experiments

    Tutkimustuotos: ArtikkeliScientificvertaisarvioitu

    4 Sitaatiot (Scopus)

    Abstrakti

    Parameter extraction procedure and simulation of dilute nitride solar cells are reported. Using PC1D simulation and fitting to experimental current-voltage and external quantum efficiency data, we retrieve the phenomenological material parameters for GaInNAs solar cells. Based on these, we have constructed a model that can explain the changes in short circuit current and open circuit voltage of n-i-p solar cells subjected to rapid thermal annealing. The model reveals that non-annealed MBE-grown GaInNAs material has an n-type doping that evolves to p-type upon rapid thermal annealing. The change of doping type and the shift of the physical location of the pn-junction were confirmed by Kelvin-probe force microscopy. The PC1D modelling was found to work well also for GaInNAs p-i-n solar cells with opposite polarity. It was also found that the GaInNAs lower doping levels in p-i-n solar cells grown at lowered As/III flux ratios were associated with increased carrier lifetimes.

    AlkuperäiskieliEnglanti
    Artikkeli8
    Sivut113-132
    Sivumäärä20
    JulkaisuJournal of Green Engineering
    Vuosikerta5
    Numero3-4
    DOI - pysyväislinkit
    TilaJulkaistu - 2016
    OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

    Julkaisufoorumi-taso

    • Jufo-taso 0

    !!ASJC Scopus subject areas

    • Environmental Engineering
    • Energy(all)
    • Physics and Astronomy(all)
    • Materials Science(all)

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