Aktiviteetteja vuodessa
Abstrakti
A lattice-matched four-junction solar cell on a GaAs substrate, for space applications, is demonstrated. The solar cell incorporates MBE grown GaInP, GaAs, GaInNAsSb and GaInNAsSb junctions with band-gaps of 1.9 eV, 1.4 eV, 1.2 eV and 0.9 eV, respectively. For AM0 illumination, the cell exhibited a maximum efficiency of 27%. For this performance, a high collection efficiency for the bottom cell is required. The high efficiency and current generation for the four-junction solar cell is primarily enabled by achieving a very low background doping level (~5×1014 cm-3) and high charge carrier lifetimes (2-4 ns) for the GaInNAsSb bottom junction. Achieving an efficiency of 33% is deemed possible by further reduction of reflection, shadowing and transmission losses.
Alkuperäiskieli | Englanti |
---|---|
Otsikko | 2019 European Space Power Conference (ESPC) |
Kustantaja | IEEE |
ISBN (elektroninen) | 978-1-7281-2126-0 |
ISBN (painettu) | 978-1-7281-2127-7 |
DOI - pysyväislinkit | |
Tila | Julkaistu - lokak. 2019 |
OKM-julkaisutyyppi | A4 Artikkeli konferenssijulkaisussa |
Tapahtuma | European Space Power Conference - Kesto: 1 tammik. 2000 → … |
Conference
Conference | European Space Power Conference |
---|---|
Ajanjakso | 1/01/00 → … |
Julkaisufoorumi-taso
- Jufo-taso 1
Sormenjälki
Sukella tutkimusaiheisiin 'High Efficiency Lattice-Matched 4J Space Solar Cells on GaAs'. Ne muodostavat yhdessä ainutlaatuisen sormenjäljen.Aktiviteetit
- 1 Konferenssiesitelmä
-
High Efficiency Lattice-Matched 4J Space Solar Cells on GaAs
Aho, A. (Speaker), Raappana, M. (Contributor), Isoaho, R. (Contributor), Aho, T. (Contributor), Polojärvi, V. (Contributor), Tukiainen, A. (Contributor), Anttola, E. (Contributor), Mäkelä, S. (Contributor), Reuna, J. V. T. (Contributor), Arttu, H. (Contributor) & Guina, M. (Contributor)
2019Aktiviteetti: Konferenssiesitelmä