High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a stepgraded base-collector heterojunction

Julkaisun otsikon käännös: High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a stepgraded base-collector heterojunction

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Julkaisun otsikon käännös	High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a stepgraded base-collector heterojunction
Alkuperäiskieli	Englanti
Sivut	479-481
Julkaisu	IEEE Electron Device Letters
Vuosikerta	16
Numero	11
Tila	Julkaistu - 1995
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

@article{23d6d560bff14525bd69bc675fafc806,

title = "High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a stepgraded base-collector heterojunction",

author = "B. Willen and U. Westergren and H. Asonen",

note = "Contribution: organisation=fys,FACT1=1",

year = "1995",

language = "English",

volume = "16",

pages = "479--481",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a stepgraded base-collector heterojunction

AU - Willen, B.

AU - Westergren, U.

AU - Asonen, H.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1995

Y1 - 1995

M3 - Article

SN - 0741-3106

VL - 16

SP - 479

EP - 481

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -