High power GaInNAs VECSEL emitting at 1230/615 nm

Jussi-Pekka Penttinen; Tomi Leinonen; Ville-Markus Korpijärvi; Emmi Kantola; Mircea Guina

High power GaInNAs VECSEL emitting at 1230/615 nm

Jussi-Pekka Penttinen, Tomi Leinonen, Ville-Markus Korpijärvi, Emmi Kantola, Mircea Guina

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

We report a frequency-doubled VECSEL operating at 1230/615 nm. The gain chip was grown by plasma-assisted MBE and comprised 10 GaInNAs quantum wells. Preliminary experiments show an output power of >8 W at 615 nm.

Alkuperäiskieli	Englanti
Otsikko	The European Conference on Lasers and Electro-Optics 2015
Kustantaja	OSA
ISBN (painettu)	978-1-4673-7475-0
Tila	Julkaistu - 22 kesäk. 2015
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	EUROPEAN CONFERENCE ON LASERS AND ELECTRO-OPTICS AND THE EUROPEAN QUANTUM ELECTRONICS CONFERENCE - Kesto: 1 tammik. 1900 → …

Conference

Conference	EUROPEAN CONFERENCE ON LASERS AND ELECTRO-OPTICS AND THE EUROPEAN QUANTUM ELECTRONICS CONFERENCE
Lyhennettä	CLEO/Europe-EQEC
Ajanjakso	1/01/00 → …

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@inproceedings{3d413f32c2bd4307925c7c3c2ff952a7,

title = "High power GaInNAs VECSEL emitting at 1230/615 nm",

abstract = "We report a frequency-doubled VECSEL operating at 1230/615 nm. The gain chip was grown by plasma-assisted MBE and comprised 10 GaInNAs quantum wells. Preliminary experiments show an output power of >8 W at 615 nm. ",

author = "Jussi-Pekka Penttinen and Tomi Leinonen and Ville-Markus Korpij{\"a}rvi and Emmi Kantola and Mircea Guina",

year = "2015",

month = jun,

day = "22",

language = "English",

isbn = "978-1-4673-7475-0",

booktitle = "The European Conference on Lasers and Electro-Optics 2015",

publisher = "OSA",

note = "European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, CLEO/Europe-EQEC ; Conference date: 01-01-1900",

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TY - GEN

T1 - High power GaInNAs VECSEL emitting at 1230/615 nm

AU - Penttinen, Jussi-Pekka

AU - Leinonen, Tomi

AU - Korpijärvi, Ville-Markus

AU - Kantola, Emmi

AU - Guina, Mircea

PY - 2015/6/22

Y1 - 2015/6/22

N2 - We report a frequency-doubled VECSEL operating at 1230/615 nm. The gain chip was grown by plasma-assisted MBE and comprised 10 GaInNAs quantum wells. Preliminary experiments show an output power of >8 W at 615 nm.

AB - We report a frequency-doubled VECSEL operating at 1230/615 nm. The gain chip was grown by plasma-assisted MBE and comprised 10 GaInNAs quantum wells. Preliminary experiments show an output power of >8 W at 615 nm.

UR - https://www.osapublishing.org/abstract.cfm?uri=cleo_europe-2015-CB_P_1&origin=search

M3 - Conference contribution

SN - 978-1-4673-7475-0

BT - The European Conference on Lasers and Electro-Optics 2015

PB - OSA

T2 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference

Y2 - 1 January 1900

ER -

High power GaInNAs VECSEL emitting at 1230/615 nm

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