Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser

Samu Pekka Ojanen; Nouman Zia; Jukka Viheriälä; Eero Koivusalo; Joonas Hilska; Ajwaad Quashef; Anders Wallin; Kalle Hanhijärvi; Thomas Fordell; Mircea Guina

doi:10.1063/5.0227303

Hybrid integrated GaSb/Si₃N₄ narrow linewidth (<50 kHz) distributed Bragg reflector laser

Samu Pekka Ojanen, Nouman Zia, Jukka Viheriälä, Eero Koivusalo, Joonas Hilska, Ajwaad Quashef, Anders Wallin, Kalle Hanhijärvi, Thomas Fordell, Mircea Guina

Fysiikka

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

12 Lataukset (Pure)

Abstrakti

A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si₃N₄ photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.

Alkuperäiskieli	Englanti
Artikkeli	091106
Julkaisu	Applied Physics Letters
Vuosikerta	125
Numero	9
DOI - pysyväislinkit	https://doi.org/10.1063/5.0227303
Tila	Julkaistu - 26 elok. 2024
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

This study was supported by EU Business Finland RAPSI (decision 1613/31/2018), EU Business Finland PICAP (decision 44761/31/2020), Academy of Finland (decisions 317204 and 328786), and Academy of Finland flagship program PREIN (decision 320168).

Rahoittajat	Rahoittajan numero
Business Finland
Strategic Research Council at the Research Council of Finland	320168, 317204, 328786

Julkaisufoorumi-taso

Jufo-taso 3

!!ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Pääsy asiakirjaan

10.1063/5.0227303Lisenssi: CC BY

091106_1_5.0227303Final published version, 1,03 MBLisenssi: CC BY

https://urn.fi/URN:NBN:fi:tuni-202409108642Lisenssi: CC BY

Siteeraa tätä

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title = "Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser",

abstract = "A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si3N4 photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.",

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T1 - Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser

AU - Ojanen, Samu Pekka

AU - Zia, Nouman

AU - Viheriälä, Jukka

AU - Koivusalo, Eero

AU - Hilska, Joonas

AU - Quashef, Ajwaad

AU - Wallin, Anders

AU - Hanhijärvi, Kalle

AU - Fordell, Thomas

AU - Guina, Mircea

PY - 2024/8/26

Y1 - 2024/8/26

N2 - A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si3N4 photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.

AB - A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si3N4 photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.

U2 - 10.1063/5.0227303

DO - 10.1063/5.0227303

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