The influence of AlGaAs-based distributed Bragg reflector (DBR) on the performance of a GaInNAs n-i-p solar cells is reported. The DBR increased the short circuit current density by ~1 mA/cm2, owing to increased external quantum efficiency in the wavelength range from 1120 nm to 1240 nm. As a result of the incorporation of the DBR structure, the series resistance of the cell was increased by 4 mOhm-cm2.
|Conference||IEEE Photovoltaic Specialists Conference|
|Ajanjakso||1/01/00 → …|