Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells

    Tutkimustuotos: ArtikkeliScientificvertaisarvioitu

    24 Sitaatiot (Scopus)

    Abstrakti

    The correlation between the As to group III flux ratio and photovoltaic performance of GaIn0.1N0.03As solar cells fabricated by molecular beam epitaxy is systematically investigated. The results show that flux ratio has a remarkable influence on the formation of defect traps. Furthermore, the formation of defects at different flux ratios is correlating with the variation of the background doping level and the photovoltaic performance. In particular, this study reveals a linear dependency between current generation, dark saturation current, defect densities, photoluminescence peak intensity and the flux ratio. A significant increase in solar cell performance, exhibiting maximum external quantum efficiency of 90%, is obtained when As/group-III ratio is decreased close to the stoichiometric limit. For optimized growth condition, the 1 eV GaIn0.1N0.03As solar cell exhibits a short circuit current density as high as 17.9 mA/cm2 calculated from the external quantum efficiency data (AM0 conditions) with 870 nm high-pass filter. This value reflects the potential of the GaInNAs cell for current matching and power generation in high efficiency solar cells incorporating three- or four- junctions.

    AlkuperäiskieliEnglanti
    Sivut213-220
    Sivumäärä8
    JulkaisuSolar Energy Materials and Solar Cells
    Vuosikerta149
    DOI - pysyväislinkit
    TilaJulkaistu - 1 toukok. 2016
    OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

    Julkaisufoorumi-taso

    • Jufo-taso 2

    !!ASJC Scopus subject areas

    • Renewable Energy, Sustainability and the Environment
    • Electronic, Optical and Magnetic Materials
    • Surfaces, Coatings and Films

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