Influence of electron irradiation and postannealing on photoluminescence of GaInNas/GaAs quantum wells

Julkaisun otsikon käännös: Influence of electron irradiation and postannealing on photoluminescence of GaInNas/GaAs quantum wells

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

3 Sitaatiot (Scopus)

Julkaisun otsikon käännös	Influence of electron irradiation and postannealing on photoluminescence of GaInNas/GaAs quantum wells
Alkuperäiskieli	Englanti
Otsikko	International Semiconductor Conference, CAS 2004, Sinaia, Romania, October 4-6, 2004
Sivut	217-220
Tila	Julkaistu - 2004
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa

Julkaisufoorumi-taso

@inproceedings{3219373f72404acbb67a19052afec56f,

title = "Influence of electron irradiation and postannealing on photoluminescence of GaInNas/GaAs quantum wells",

author = "E-M. Pavelescu and A. Gheorghiu and N. Baltateanu and T. Jouhti and V. Cimpoca and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2004",

language = "English",

pages = "217--220",

booktitle = "International Semiconductor Conference, CAS 2004, Sinaia, Romania, October 4-6, 2004",

}

TY - GEN

T1 - Influence of electron irradiation and postannealing on photoluminescence of GaInNas/GaAs quantum wells

AU - Pavelescu, E-M.

AU - Gheorghiu, A.

AU - Baltateanu, N.

AU - Jouhti, T.

AU - Cimpoca, V.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2004

Y1 - 2004

M3 - Conference contribution

SP - 217

EP - 220

BT - International Semiconductor Conference, CAS 2004, Sinaia, Romania, October 4-6, 2004

ER -