Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films

Tristan Smołka; Michał Rygała; Joonas Hilska; Janne Puustinen; Eero Koivusalo; Mircea Guina; Marcin Motyka

doi:10.1021/acsomega.3c05046

Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films

Tristan Smołka, Michał Rygała, Joonas Hilska, Janne Puustinen, Eero Koivusalo, Mircea Guina, Marcin Motyka

Fysiikka

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

3 Sitaatiot (Scopus)

10 Lataukset (Pure)

Abstrakti

We report the optical properties of GaSbBi layers grown on GaSb (100) substrates with different bismuth contents of 5.8 and 8.0% Bi. Fourier-transform photoluminescence spectra were determined to identify the band gaps of the studied materials. Further temperature- and power-dependent photoluminescence measurements indicated the presence of localized states connected to bismuth clustering. Finally, time-resolved photoluminescence measurements based on single-photon counting allowed the determination of characteristic photoluminescence decay time constants. Because of the increasing bismuth content and clustering effects, an increase in the time constant was observed.

Alkuperäiskieli	Englanti
Sivut	36355-36360
Sivumäärä	6
Julkaisu	ACS Omega
Vuosikerta	39
Numero	8
DOI - pysyväislinkit	https://doi.org/10.1021/acsomega.3c05046
Tila	Julkaistu - 2023
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Yleinen kemia
Yleinen kemian tekniikka

Pääsy asiakirjaan

10.1021/acsomega.3c05046Lisenssi: CC BY

smołka-et-al-2023-influence-of-the-bismuth-content-on-the-optical-properties-and-photoluminescence-decay-time-in-gasbbiFinal published version, 3,81 MBLisenssi: CC BY

https://urn.fi/URN:NBN:fi:tuni-2023111610030Lisenssi: CC BY

Siteeraa tätä

@article{92e84b6266034e83b1f7032019ffa68a,

title = "Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films",

abstract = "We report the optical properties of GaSbBi layers grown on GaSb (100) substrates with different bismuth contents of 5.8 and 8.0% Bi. Fourier-transform photoluminescence spectra were determined to identify the band gaps of the studied materials. Further temperature- and power-dependent photoluminescence measurements indicated the presence of localized states connected to bismuth clustering. Finally, time-resolved photoluminescence measurements based on single-photon counting allowed the determination of characteristic photoluminescence decay time constants. Because of the increasing bismuth content and clustering effects, an increase in the time constant was observed.",

author = "Tristan Smo{\l}ka and Micha{\l} Ryga{\l}a and Joonas Hilska and Janne Puustinen and Eero Koivusalo and Mircea Guina and Marcin Motyka",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors. Published by American Chemical Society.",

year = "2023",

doi = "10.1021/acsomega.3c05046",

language = "English",

volume = "39",

pages = "36355--36360",

journal = "ACS Omega",

issn = "2470-1343",

publisher = "American Chemical Society ACS",

number = "8",

}

TY - JOUR

T1 - Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films

AU - Smołka, Tristan

AU - Rygała, Michał

AU - Hilska, Joonas

AU - Puustinen, Janne

AU - Koivusalo, Eero

AU - Guina, Mircea

AU - Motyka, Marcin

PY - 2023

Y1 - 2023

N2 - We report the optical properties of GaSbBi layers grown on GaSb (100) substrates with different bismuth contents of 5.8 and 8.0% Bi. Fourier-transform photoluminescence spectra were determined to identify the band gaps of the studied materials. Further temperature- and power-dependent photoluminescence measurements indicated the presence of localized states connected to bismuth clustering. Finally, time-resolved photoluminescence measurements based on single-photon counting allowed the determination of characteristic photoluminescence decay time constants. Because of the increasing bismuth content and clustering effects, an increase in the time constant was observed.

AB - We report the optical properties of GaSbBi layers grown on GaSb (100) substrates with different bismuth contents of 5.8 and 8.0% Bi. Fourier-transform photoluminescence spectra were determined to identify the band gaps of the studied materials. Further temperature- and power-dependent photoluminescence measurements indicated the presence of localized states connected to bismuth clustering. Finally, time-resolved photoluminescence measurements based on single-photon counting allowed the determination of characteristic photoluminescence decay time constants. Because of the increasing bismuth content and clustering effects, an increase in the time constant was observed.

U2 - 10.1021/acsomega.3c05046

DO - 10.1021/acsomega.3c05046

M3 - Article

AN - SCOPUS:85175094485

SN - 2470-1343

VL - 39

SP - 36355

EP - 36360

JO - ACS Omega

JF - ACS Omega

IS - 8

ER -

Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films

Abstrakti

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä