InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Paulo H. Moriya, Riccardo Casula, George A. Chappel, Daniele C. Parrotta, Sanna Ranta, Hermann Kahle, Mircea Guina, Jennifer E. Hastie

Tutkimustuotos: ArticleScientificvertaisarvioitu

13 Lataukset (Pure)

Abstrakti

We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

AlkuperäiskieliEnglanti
Sivut3258-3268
Sivumäärä11
JulkaisuOptics Express
Vuosikerta29
Numero3
DOI - pysyväislinkit
TilaJulkaistu - 2021
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Julkaisufoorumi-taso

  • Jufo-taso 1

!!ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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