InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Paulo H. Moriya; Riccardo Casula; George A. Chappel; Daniele C. Parrotta; Sanna Ranta; Hermann Kahle; Mircea Guina; Jennifer E. Hastie

doi:10.1364/OE.416210

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Paulo H. Moriya, Riccardo Casula, George A. Chappel, Daniele C. Parrotta, Sanna Ranta, Hermann Kahle, Mircea Guina, Jennifer E. Hastie

Fysiikka

Tutkimustuotos: Article › Scientific › vertaisarvioitu

13 Lataukset (Pure)

Abstrakti

We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

Alkuperäiskieli	Englanti
Sivut	3258-3268
Sivumäärä	11
Julkaisu	Optics Express
Vuosikerta	29
Numero	3
DOI - pysyväislinkit	https://doi.org/10.1364/OE.416210
Tila	Julkaistu - 2021
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Pääsy asiakirjaan

10.1364/OE.416210Lisenssi: CC BY

InGaN-diode-pumped AlGaInP VECSEL 2021
CC BY
Final published version, 8,23 MBLisenssi: CC BY

http://urn.fi/URN:NBN:fi:tuni-202105265453Lisenssi: CC BY

Siteeraa tätä

@article{862084a9460d4937a5730a5ccb40ba0b,

title = "InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm",

abstract = "We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.",

author = "Moriya, {Paulo H.} and Riccardo Casula and Chappel, {George A.} and Parrotta, {Daniele C.} and Sanna Ranta and Hermann Kahle and Mircea Guina and Hastie, {Jennifer E.}",

year = "2021",

doi = "10.1364/OE.416210",

language = "English",

volume = "29",

pages = "3258--3268",

journal = "Opt. Express",

issn = "1094-4087",

number = "3",

}

TY - JOUR

T1 - InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

AU - Moriya, Paulo H.

AU - Casula, Riccardo

AU - Chappel, George A.

AU - Parrotta, Daniele C.

AU - Ranta, Sanna

AU - Kahle, Hermann

AU - Guina, Mircea

AU - Hastie, Jennifer E.

PY - 2021

Y1 - 2021

N2 - We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

AB - We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

U2 - 10.1364/OE.416210

DO - 10.1364/OE.416210

M3 - Article

C2 - 33770928

AN - SCOPUS:85099785470

VL - 29

SP - 3258

EP - 3268

JO - Opt. Express

JF - Opt. Express

SN - 1094-4087

IS - 3

ER -

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Abstrakti

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

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