Inherent electron and hole trapping in amorphous phase-change memory materials: Ge₂Sb₂Te₅

Engineering & Materials Science

• Phase change memory 100%
• Electrons 71%
• Charge trapping 55%
• Phase change materials 39%
• Ionization potential 31%
• Chalcogenides 27%
• Density functional theory 26%
• Joule heating 23%
• Data storage equipment 21%
• Energy gap 20%
• Melting 16%
• Glass 14%
• Electric potential 9%

Chemical Compounds

• Phase Change Material 60%
• Amorphous Material 49%
• Electron Particle 38%
• Deep Trap 36%
• Hole (Electron) 28%
• Ionization Potential 23%
• Octahedral Crystal 22%
• Melting 20%
• Band Gap 17%
• Voltage 17%
• Glass 16%
• Resistance 14%
• Density Functional Theory 14%
• Environment 13%