Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

E.I. Moiseev; N.V. Kryzhanovskaya; M.V. Maximov; A.M. Mozharov; A.S. Gudovskikh; A.S. Polushkin; I.S. Mukhin; Yu A. Guseva; M. M. Kulagina; S. I. Troshokov; T. Niemi; R. Isoaho; M. Guina; A.E. Zhukov

doi:10.1088/1742-6596/917/5/052002

Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

E.I. Moiseev, N.V. Kryzhanovskaya, M.V. Maximov, A.M. Mozharov, A.S. Gudovskikh, A.S. Polushkin, I.S. Mukhin, Yu A. Guseva, M. M. Kulagina, S. I. Troshokov, T. Niemi, R. Isoaho, M. Guina, A.E. Zhukov

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

3 Sitaatiot (Scopus)

41 Lataukset (Pure)

Abstrakti

Microdisk lasers based on three InGaAsN/GaAs quantum wells with different types of surface passivation are fabricated and studied under optical pumping. Room temperature lasing at 1.3 μm in 7 μm in diameter microdisks with InGaAsN/GaAs QW is demonstrated. We evaluated the thermal resistance as 1 °C/mW.

Alkuperäiskieli	Englanti
Artikkeli	052002
Sivumäärä	3
Julkaisu	Journal of Physics: Conference Series
Vuosikerta	917
Numero	5
DOI - pysyväislinkit	https://doi.org/10.1088/1742-6596/917/5/052002
Tila	Julkaistu - marrask. 2017
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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10.1088/1742-6596/917/5/052002Lisenssi: CC BY

Moiseev_2017_J._Phys.__Conf._Ser._917_052002Final published version, 169 KBLisenssi: CC BY

http://urn.fi/URN:NBN:fi:tty-201801231118Lisenssi: CC BY

Siteeraa tätä

Moiseev, E. I., Kryzhanovskaya, N. V., Maximov, M. V., Mozharov, A. M., Gudovskikh, A. S., Polushkin, A. S., Mukhin, I. S., Guseva, Y. A., Kulagina, M. M., Troshokov, S. I., Niemi, T., Isoaho, R., Guina, M., & Zhukov, A. E. (2017). Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region. Journal of Physics: Conference Series, 917(5), Artikkeli 052002. https://doi.org/10.1088/1742-6596/917/5/052002

@article{74c366964bee458e92ade6fe7696bb68,

title = "Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region",

abstract = "Microdisk lasers based on three InGaAsN/GaAs quantum wells with different types of surface passivation are fabricated and studied under optical pumping. Room temperature lasing at 1.3 μm in 7 μm in diameter microdisks with InGaAsN/GaAs QW is demonstrated. We evaluated the thermal resistance as 1 °C/mW.",

author = "E.I. Moiseev and N.V. Kryzhanovskaya and M.V. Maximov and A.M. Mozharov and A.S. Gudovskikh and A.S. Polushkin and I.S. Mukhin and Guseva, {Yu A.} and Kulagina, {M. M.} and Troshokov, {S. I.} and T. Niemi and R. Isoaho and M. Guina and A.E. Zhukov",

year = "2017",

month = nov,

doi = "10.1088/1742-6596/917/5/052002",

language = "English",

volume = "917",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "5",

}

Moiseev, EI, Kryzhanovskaya, NV, Maximov, MV, Mozharov, AM, Gudovskikh, AS, Polushkin, AS, Mukhin, IS, Guseva, YA, Kulagina, MM, Troshokov, SI, Niemi, T , Isoaho, R , Guina, M & Zhukov, AE 2017, 'Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region', Journal of Physics: Conference Series, Vuosikerta 917, Nro 5, 052002. https://doi.org/10.1088/1742-6596/917/5/052002

TY - JOUR

T1 - Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

AU - Moiseev, E.I.

AU - Kryzhanovskaya, N.V.

AU - Maximov, M.V.

AU - Mozharov, A.M.

AU - Gudovskikh, A.S.

AU - Polushkin, A.S.

AU - Mukhin, I.S.

AU - Guseva, Yu A.

AU - Kulagina, M. M.

AU - Troshokov, S. I.

AU - Niemi, T.

AU - Isoaho, R.

AU - Guina, M.

AU - Zhukov, A.E.

PY - 2017/11

Y1 - 2017/11

N2 - Microdisk lasers based on three InGaAsN/GaAs quantum wells with different types of surface passivation are fabricated and studied under optical pumping. Room temperature lasing at 1.3 μm in 7 μm in diameter microdisks with InGaAsN/GaAs QW is demonstrated. We evaluated the thermal resistance as 1 °C/mW.

AB - Microdisk lasers based on three InGaAsN/GaAs quantum wells with different types of surface passivation are fabricated and studied under optical pumping. Room temperature lasing at 1.3 μm in 7 μm in diameter microdisks with InGaAsN/GaAs QW is demonstrated. We evaluated the thermal resistance as 1 °C/mW.

U2 - 10.1088/1742-6596/917/5/052002

DO - 10.1088/1742-6596/917/5/052002

M3 - Article

SN - 1742-6588

VL - 917

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 5

M1 - 052002

ER -

Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

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