Light sensitive polymer thin film transistors based on BAS-PPE

Yifan Xu; Paul R. Berger; James N. Wilson; Uwe H.F. Bunz

doi:10.1557/proc-814-i13.7

Light sensitive polymer thin film transistors based on BAS-PPE

Yifan Xu, Paul R. Berger, James N. Wilson, Uwe H.F. Bunz

Tutkimustuotos: Konferenssiartikkeli › Scientific › vertaisarvioitu

Abstrakti

The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of V_DS demonstrates that I_DS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of V_DS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

Alkuperäiskieli	Englanti
Otsikko	Flexible Electronics 2004
Alaotsikko	Materials and Device Technology
Kustantaja	Materials Research Society
Sivut	152–156
Sivumäärä	5
DOI - pysyväislinkit	https://doi.org/10.1557/proc-814-i13.7
Tila	Julkaistu - 2004
Julkaistu ulkoisesti	Kyllä
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Flexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, Yhdysvallat Kesto: 13 huhtik. 2004 → 16 huhtik. 2004

Julkaisusarja

Nimi	Materials Research Society Symposium Proceedings
Kustantaja	Materials Research Society
Vuosikerta	814
ISSN (painettu)	0272-9172
ISSN (elektroninen)	1946-4274

Conference

Conference	Flexible Electronics 2004 - Materials and Device Technology
Maa/Alue	Yhdysvallat
Kaupunki	San Francisco, CA
Ajanjakso	13/04/04 → 16/04/04

!!ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Pääsy asiakirjaan

10.1557/proc-814-i13.7

Siteeraa tätä

@inproceedings{cd411b09e19742bb9f568c107b2b3ed1,

title = "Light sensitive polymer thin film transistors based on BAS-PPE",

abstract = "The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.",

author = "Yifan Xu and Berger, {Paul R.} and Wilson, {James N.} and Bunz, {Uwe H.F.}",

year = "2004",

doi = "10.1557/proc-814-i13.7",

language = "English",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "152–156",

booktitle = "Flexible Electronics 2004",

address = "United States",

}

Xu, Y, Berger, PR, Wilson, JN & Bunz, UHF 2004, Light sensitive polymer thin film transistors based on BAS-PPE. julkaisussa Flexible Electronics 2004: Materials and Device Technology. Materials Research Society Symposium Proceedings, Vuosikerta 814, Materials Research Society, Sivut 152–156, Flexible Electronics 2004 - Materials and Device Technology, San Francisco, CA, Yhdysvallat, 13/04/04. https://doi.org/10.1557/proc-814-i13.7

TY - GEN

T1 - Light sensitive polymer thin film transistors based on BAS-PPE

AU - Xu, Yifan

AU - Berger, Paul R.

AU - Wilson, James N.

AU - Bunz, Uwe H.F.

PY - 2004

Y1 - 2004

N2 - The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

AB - The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

U2 - 10.1557/proc-814-i13.7

DO - 10.1557/proc-814-i13.7

M3 - Conference contribution

AN - SCOPUS:12844285618

T3 - Materials Research Society Symposium Proceedings

SP - 152

EP - 156

BT - Flexible Electronics 2004

PB - Materials Research Society

T2 - Flexible Electronics 2004 - Materials and Device Technology

Y2 - 13 April 2004 through 16 April 2004

ER -

Light sensitive polymer thin film transistors based on BAS-PPE

Abstrakti

Julkaisusarja

Conference

!!ASJC Scopus subject areas

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