Low resistance ohmic contacts to p-Ge1-xCx on Si

Xiaoping Shao; S. L. Rommel; B. A. Orner; Paul R. Berger; J. Kolodzey; K. M. Unruh

doi:10.1109/55.553059

Low resistance ohmic contacts to p-Ge_1-xC_x on Si

Xiaoping Shao^*
, S. L. Rommel
, B. A. Orner
, Paul R. Berger
, J. Kolodzey
, K. M. Unruh

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

4 Sitaatiot (Scopus)

Abstrakti

We report on ohmic contact measurements of A1, Au, and W metallizations to p-type epitaxial Ge_0.9983C_0.0017 grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from 10^-5 Ω · cm² to as low as 5.6 × 10^-6 Ω · cm². Theoretical calculations of the contact resistance of metals on Ge_1-xC_x with small percentages of carbon, based on the thermionic field emission mechanism of conduction, result in good agreement with the experimental data. We conclude that Al and Au are suitable ohmic contacts to p-Ge_0.9983C_0.0017 alloys.

Alkuperäiskieli	Englanti
Sivut	7-9
Sivumäärä	3
Julkaisu	IEEE Electron Device Letters
Vuosikerta	18
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1109/55.553059
Tila	Julkaistu - tammik. 1997
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

Manuscript received August 6, 1996; revised October 2, 1996. This work was supported by AFOSR Grant F49620-95-1-0135 and DARPA (Sponsored Research Agreement with Texas Instruments, Inc.) under Grant SRA-3312665).

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.553059

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@article{b23874551b7646718efd0c8f1fe025d9,

title = "Low resistance ohmic contacts to p-Ge1-xCx on Si",

abstract = "We report on ohmic contact measurements of A1, Au, and W metallizations to p-type epitaxial Ge0.9983C0.0017 grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from 10-5 Ω · cm2 to as low as 5.6 × 10-6 Ω · cm2. Theoretical calculations of the contact resistance of metals on Ge1-xCx with small percentages of carbon, based on the thermionic field emission mechanism of conduction, result in good agreement with the experimental data. We conclude that Al and Au are suitable ohmic contacts to p-Ge0.9983C0.0017 alloys.",

author = "Xiaoping Shao and Rommel, \{S. L.\} and Orner, \{B. A.\} and Berger, \{Paul R.\} and J. Kolodzey and Unruh, \{K. M.\}",

note = "Funding Information: Manuscript received August 6, 1996; revised October 2, 1996. This work was supported by AFOSR Grant F49620-95-1-0135 and DARPA (Sponsored Research Agreement with Texas Instruments, Inc.) under Grant SRA-3312665). Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "1997",

month = jan,

doi = "10.1109/55.553059",

language = "English",

volume = "18",

pages = "7--9",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Low resistance ohmic contacts to p-Ge1-xCx on Si

AU - Shao, Xiaoping

AU - Rommel, S. L.

AU - Orner, B. A.

AU - Berger, Paul R.

AU - Kolodzey, J.

AU - Unruh, K. M.

N1 - Funding Information: Manuscript received August 6, 1996; revised October 2, 1996. This work was supported by AFOSR Grant F49620-95-1-0135 and DARPA (Sponsored Research Agreement with Texas Instruments, Inc.) under Grant SRA-3312665). Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 1997/1

Y1 - 1997/1

N2 - We report on ohmic contact measurements of A1, Au, and W metallizations to p-type epitaxial Ge0.9983C0.0017 grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from 10-5 Ω · cm2 to as low as 5.6 × 10-6 Ω · cm2. Theoretical calculations of the contact resistance of metals on Ge1-xCx with small percentages of carbon, based on the thermionic field emission mechanism of conduction, result in good agreement with the experimental data. We conclude that Al and Au are suitable ohmic contacts to p-Ge0.9983C0.0017 alloys.

AB - We report on ohmic contact measurements of A1, Au, and W metallizations to p-type epitaxial Ge0.9983C0.0017 grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from 10-5 Ω · cm2 to as low as 5.6 × 10-6 Ω · cm2. Theoretical calculations of the contact resistance of metals on Ge1-xCx with small percentages of carbon, based on the thermionic field emission mechanism of conduction, result in good agreement with the experimental data. We conclude that Al and Au are suitable ohmic contacts to p-Ge0.9983C0.0017 alloys.

UR - https://www.scopus.com/pages/publications/0030837297

U2 - 10.1109/55.553059

DO - 10.1109/55.553059

M3 - Article

AN - SCOPUS:0030837297

SN - 0741-3106

VL - 18

SP - 7

EP - 9

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -