Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cells

Amr Ghazy; Muhammad Safdar; Mika Lastusaari; Arto Aho; Antti Tukiainen; Hele Savin; Mircea Guina; Maarit Karppinen

doi:10.1016/j.solmat.2020.110787

Luminescent (Er,Ho)₂O₃ thin films by ALD to enhance the performance of silicon solar cells

Amr Ghazy
, Muhammad Safdar
, Mika Lastusaari
, Arto Aho
, Antti Tukiainen
, Hele Savin
, Mircea Guina
, Maarit Karppinen^*

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

13 Sitaatiot (Scopus)

37 Lataukset (Pure)

Abstrakti

We have fabricated luminescent (Er,Ho)₂O₃ thin films by atomic layer deposition (ALD) and studied their capability to enhance the performance of state-of-the-art single-junction c-Si bifacial solar cells. The films convert IR photons (e.g. 1523 nm) by three- and two-photon upconversion process to emit visible-light in the 400–700 nm range. When the films were coupled with solar cells, ~3% improvement in the short-circuit current density (620 ± 5 to 638 ± 5 mAcm⁻²) was recorded under a simulated solar excitation equivalent to 16 suns. These findings highlight a potential of ALD for the design and fabrication of luminescent coatings for practical solar cell devices.

Alkuperäiskieli	Englanti
Artikkeli	110787
Sivumäärä	5
Julkaisu	Solar Energy Materials and Solar Cells
Vuosikerta	219
Varhainen verkossa julkaisun päivämäärä	2020
DOI - pysyväislinkit	https://doi.org/10.1016/j.solmat.2020.110787
Tila	Julkaistu - 2021
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

We thank Iris Mack, Department of Electronics and Nanoengineering , Aalto University , for her kind support. Funding was received from European Research Council for the Advanced Grant Projects LAYERENG-HYBMAT ( 339478 ) and AMETIST ( 695116 ), and also from Academy of Finland ( 296299 ). The authors also acknowledge the funding provided by the Academy of Finland Flagship Programme, Photonics Research and Innovation (PREIN; 320167 and 340168 ), and the use of the RawMatTERS Finland Infrastructure (RAMI) at Aalto University . Amr Ghazy acknowledges Jenny & Antti Wihuri Foundation for financial support.

YK:n kestävän kehityksen tavoitteet

Tämä tuotos edistää seuraavia kestävän kehityksen tavoitteita:

SDG 7 – Edullinen ja puhdas energia

Julkaisufoorumi-taso

Jufo-taso 2

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

Pääsy asiakirjaan

10.1016/j.solmat.2020.110787

Luminescent_Er_Ho_2O3_thin_filmsAccepted author manuscript, 359 KBLisenssi: CC BY-NC-ND

https://urn.fi/URN:NBN:fi:tuni-202112209402Lisenssi: CC BY-NC-ND

Siteeraa tätä

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title = "Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cells",

abstract = "We have fabricated luminescent (Er,Ho)2O3 thin films by atomic layer deposition (ALD) and studied their capability to enhance the performance of state-of-the-art single-junction c-Si bifacial solar cells. The films convert IR photons (e.g. 1523 nm) by three- and two-photon upconversion process to emit visible-light in the 400–700 nm range. When the films were coupled with solar cells, \textasciitilde{}3\% improvement in the short-circuit current density (620 ± 5 to 638 ± 5 mAcm−2) was recorded under a simulated solar excitation equivalent to 16 suns. These findings highlight a potential of ALD for the design and fabrication of luminescent coatings for practical solar cell devices.",

keywords = "Atomic layer deposition, c-Si solar cell, Luminescence, Photonics, Upconversion",

author = "Amr Ghazy and Muhammad Safdar and Mika Lastusaari and Arto Aho and Antti Tukiainen and Hele Savin and Mircea Guina and Maarit Karppinen",

year = "2021",

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T1 - Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cells

AU - Ghazy, Amr

AU - Safdar, Muhammad

AU - Lastusaari, Mika

AU - Aho, Arto

AU - Tukiainen, Antti

AU - Savin, Hele

AU - Guina, Mircea

AU - Karppinen, Maarit

PY - 2021

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N2 - We have fabricated luminescent (Er,Ho)2O3 thin films by atomic layer deposition (ALD) and studied their capability to enhance the performance of state-of-the-art single-junction c-Si bifacial solar cells. The films convert IR photons (e.g. 1523 nm) by three- and two-photon upconversion process to emit visible-light in the 400–700 nm range. When the films were coupled with solar cells, ~3% improvement in the short-circuit current density (620 ± 5 to 638 ± 5 mAcm−2) was recorded under a simulated solar excitation equivalent to 16 suns. These findings highlight a potential of ALD for the design and fabrication of luminescent coatings for practical solar cell devices.

AB - We have fabricated luminescent (Er,Ho)2O3 thin films by atomic layer deposition (ALD) and studied their capability to enhance the performance of state-of-the-art single-junction c-Si bifacial solar cells. The films convert IR photons (e.g. 1523 nm) by three- and two-photon upconversion process to emit visible-light in the 400–700 nm range. When the films were coupled with solar cells, ~3% improvement in the short-circuit current density (620 ± 5 to 638 ± 5 mAcm−2) was recorded under a simulated solar excitation equivalent to 16 suns. These findings highlight a potential of ALD for the design and fabrication of luminescent coatings for practical solar cell devices.

KW - Atomic layer deposition

KW - c-Si solar cell

KW - Luminescence

KW - Photonics

KW - Upconversion

U2 - 10.1016/j.solmat.2020.110787

DO - 10.1016/j.solmat.2020.110787

M3 - Article

AN - SCOPUS:85090731507

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JO - Solar Energy Materials and Solar Cells

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