Microchip laser Q-switched with GaInNAs/GaAs SESAM emitting 204 ps pulses at 1342 nm

J. Nikkinen; V. M. Korpijärvi; I. Leino; A. Härkönen; M. Guina

doi:10.1049/el.2015.1000

Microchip laser Q-switched with GaInNAs/GaAs SESAM emitting 204 ps pulses at 1342 nm

J. Nikkinen^*
, V. M. Korpijärvi
, I. Leino
, A. Härkönen
, M. Guina

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli › Tieteellinen › vertaisarvioitu

4 Sitaatiot (Scopus)

Abstrakti

A 1342 nm Nd:YVO4 microchip laser is reported, Q-switched with a dilute nitride GaInNAs/GaAs saturable absorber mirror. The laser produced optical pulses as short as 204 ps with 2.3 MHz repetition rate and 24 mW average output power. In comparison to conventional InP-based saturable absorber mirrors, the advantage of the proposed approach is the availability of excellent Bragg mirror materials that enable high reflectivity and more flexibility in designing the nonlinear parameters owing to the use of lattice matched GaInNAs/GaAs quantum wells.

Alkuperäiskieli	Englanti
Sivut	850-852
Sivumäärä	3
Julkaisu	Electronics Letters
Vuosikerta	51
Numero	11
DOI - pysyväislinkit	https://doi.org/10.1049/el.2015.1000
Tila	Julkaistu - 28 toukok. 2015
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Electrical and Electronic Engineering

Pääsy asiakirjaan

10.1049/el.2015.1000

Siteeraa tätä

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title = "Microchip laser Q-switched with GaInNAs/GaAs SESAM emitting 204 ps pulses at 1342 nm",

abstract = "A 1342 nm Nd:YVO4 microchip laser is reported, Q-switched with a dilute nitride GaInNAs/GaAs saturable absorber mirror. The laser produced optical pulses as short as 204 ps with 2.3 MHz repetition rate and 24 mW average output power. In comparison to conventional InP-based saturable absorber mirrors, the advantage of the proposed approach is the availability of excellent Bragg mirror materials that enable high reflectivity and more flexibility in designing the nonlinear parameters owing to the use of lattice matched GaInNAs/GaAs quantum wells.",

author = "J. Nikkinen and Korpij{\"a}rvi, \{V. M.\} and I. Leino and A. H{\"a}rk{\"o}nen and M. Guina",

year = "2015",

month = may,

day = "28",

doi = "10.1049/el.2015.1000",

language = "English",

volume = "51",

pages = "850--852",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons",

number = "11",

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TY - JOUR

T1 - Microchip laser Q-switched with GaInNAs/GaAs SESAM emitting 204 ps pulses at 1342 nm

AU - Nikkinen, J.

AU - Korpijärvi, V. M.

AU - Leino, I.

AU - Härkönen, A.

AU - Guina, M.

PY - 2015/5/28

Y1 - 2015/5/28

N2 - A 1342 nm Nd:YVO4 microchip laser is reported, Q-switched with a dilute nitride GaInNAs/GaAs saturable absorber mirror. The laser produced optical pulses as short as 204 ps with 2.3 MHz repetition rate and 24 mW average output power. In comparison to conventional InP-based saturable absorber mirrors, the advantage of the proposed approach is the availability of excellent Bragg mirror materials that enable high reflectivity and more flexibility in designing the nonlinear parameters owing to the use of lattice matched GaInNAs/GaAs quantum wells.

AB - A 1342 nm Nd:YVO4 microchip laser is reported, Q-switched with a dilute nitride GaInNAs/GaAs saturable absorber mirror. The laser produced optical pulses as short as 204 ps with 2.3 MHz repetition rate and 24 mW average output power. In comparison to conventional InP-based saturable absorber mirrors, the advantage of the proposed approach is the availability of excellent Bragg mirror materials that enable high reflectivity and more flexibility in designing the nonlinear parameters owing to the use of lattice matched GaInNAs/GaAs quantum wells.

U2 - 10.1049/el.2015.1000

DO - 10.1049/el.2015.1000

M3 - Article

AN - SCOPUS:84929650640

SN - 0013-5194

VL - 51

SP - 850

EP - 852

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Microchip laser Q-switched with GaInNAs/GaAs SESAM emitting 204 ps pulses at 1342 nm

Abstrakti

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä