Microdisk lasers based on GaInNAsSb/GaAsN quantum well active region

E. I. Moiseev; N. V. Kryzhanovskaya; Yu V. Kudashova; M. V. Maximov; M. M. Kulagina; S. I. Troshkov; A. A. Lipovskii; V.-M. Korpijärvi; H. Karjalainen; T. Niemi; M. Guina; A. E. Zhukov

doi:10.1088/1742-6596/643/1/012040

Microdisk lasers based on GaInNAsSb/GaAsN quantum well active region

E. I. Moiseev, N. V. Kryzhanovskaya, Yu V. Kudashova, M. V. Maximov, M. M. Kulagina, S. I. Troshkov, A. A. Lipovskii, V.-M. Korpijärvi, H. Karjalainen, T. Niemi, M. Guina, A. E. Zhukov

Tutkimustuotos: Artikkeli › Scientific › vertaisarvioitu

Abstrakti

Microdisk lasers based on novel InGaAsNSb/GaAsN quantum well active region are developed and studied under optical pumping. Room temperature lasing at 1.55 mu m in 2.3 mu m in diameter microdisks with InGaAsNSb/GaAsN QW is demonstrated.

Alkuperäiskieli	Englanti
Sivumäärä	4
Julkaisu	Journal of Physics: Conference Series
Vuosikerta	643
DOI - pysyväislinkit	https://doi.org/10.1088/1742-6596/643/1/012040
Tila	Julkaistu - 2015
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Tapahtuma	International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures - , Venäjä Kesto: 1 tammik. 2000 → …

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10.1088/1742-6596/643/1/012040

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@article{b31064ebaf2f4d6ca2ef1df67499b30c,

title = "Microdisk lasers based on GaInNAsSb/GaAsN quantum well active region",

abstract = "Microdisk lasers based on novel InGaAsNSb/GaAsN quantum well active region are developed and studied under optical pumping. Room temperature lasing at 1.55 mu m in 2.3 mu m in diameter microdisks with InGaAsNSb/GaAsN QW is demonstrated.",

keywords = "EPITAXIAL-GROWTH, GAINNAS, THRESHOLD, GAAS",

author = "Moiseev, {E. I.} and Kryzhanovskaya, {N. V.} and Kudashova, {Yu V.} and Maximov, {M. V.} and Kulagina, {M. M.} and Troshkov, {S. I.} and Lipovskii, {A. A.} and V.-M. Korpij{\"a}rvi and H. Karjalainen and T. Niemi and M. Guina and Zhukov, {A. E.}",

year = "2015",

doi = "10.1088/1742-6596/643/1/012040",

language = "English",

volume = "643",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing",

note = "International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures ; Conference date: 01-01-2000",

}

TY - JOUR

T1 - Microdisk lasers based on GaInNAsSb/GaAsN quantum well active region

AU - Moiseev, E. I.

AU - Kryzhanovskaya, N. V.

AU - Kudashova, Yu V.

AU - Maximov, M. V.

AU - Kulagina, M. M.

AU - Troshkov, S. I.

AU - Lipovskii, A. A.

AU - Korpijärvi, V.-M.

AU - Karjalainen, H.

AU - Niemi, T.

AU - Guina, M.

AU - Zhukov, A. E.

PY - 2015

Y1 - 2015

N2 - Microdisk lasers based on novel InGaAsNSb/GaAsN quantum well active region are developed and studied under optical pumping. Room temperature lasing at 1.55 mu m in 2.3 mu m in diameter microdisks with InGaAsNSb/GaAsN QW is demonstrated.

AB - Microdisk lasers based on novel InGaAsNSb/GaAsN quantum well active region are developed and studied under optical pumping. Room temperature lasing at 1.55 mu m in 2.3 mu m in diameter microdisks with InGaAsNSb/GaAsN QW is demonstrated.

KW - EPITAXIAL-GROWTH

KW - GAINNAS

KW - THRESHOLD

KW - GAAS

U2 - 10.1088/1742-6596/643/1/012040

DO - 10.1088/1742-6596/643/1/012040

M3 - Article

SN - 1742-6588

VL - 643

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

T2 - International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Y2 - 1 January 2000

ER -

Microdisk lasers based on GaInNAsSb/GaAsN quantum well active region

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