Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

N. V. Kryzhanovskaya; E. I. Moiseev; Yu S. Polubavkina; F. I. Zubov; M. V. Maximov; A. A. Lipovskii; M. M. Kulagina; S. I. Troshkov; V. M. Korpijärvi; T. Niemi; R. Isoaho; M. Guina; M. V. Lebedev; T. V. Lvova; A. E. Zhukov

doi:10.1063/1.4971977

Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

N. V. Kryzhanovskaya, E. I. Moiseev, Yu S. Polubavkina, F. I. Zubov, M. V. Maximov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, V. M. Korpijärvi, T. Niemi, R. Isoaho, M. Guina, M. V. Lebedev, T. V. Lvova, A. E. Zhukov

Tutkimustuotos: Artikkeli › Scientific › vertaisarvioitu

6 Sitaatiot (Scopus)

10 Lataukset (Pure)

Abstrakti

We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiN_x encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T₀ = 60 K.

Alkuperäiskieli	Englanti
Artikkeli	233103
Julkaisu	Journal of Applied Physics
Vuosikerta	120
Numero	23
DOI - pysyväislinkit	https://doi.org/10.1063/1.4971977
Tila	Julkaistu - 21 jouluk. 2016
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Physics and Astronomy(all)

Pääsy asiakirjaan

10.1063/1.4971977

microdisk_lasers_based_2016
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http://urn.fi/URN:NBN:fi:tuni-201912307138

Siteeraa tätä

Kryzhanovskaya, N. V., Moiseev, E. I., Polubavkina, Y. S., Zubov, F. I., Maximov, M. V., Lipovskii, A. A., Kulagina, M. M., Troshkov, S. I., Korpijärvi, V. M., Niemi, T., Isoaho, R., Guina, M., Lebedev, M. V., Lvova, T. V., & Zhukov, A. E. (2016). Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells. Journal of Applied Physics, 120(23), [233103]. https://doi.org/10.1063/1.4971977

@article{f5e94f1540134546a3f48bb2794f15ef,

title = "Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells",

abstract = "We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T0 = 60 K.",

author = "Kryzhanovskaya, {N. V.} and Moiseev, {E. I.} and Polubavkina, {Yu S.} and Zubov, {F. I.} and Maximov, {M. V.} and Lipovskii, {A. A.} and Kulagina, {M. M.} and Troshkov, {S. I.} and Korpij{\"a}rvi, {V. M.} and T. Niemi and R. Isoaho and M. Guina and Lebedev, {M. V.} and Lvova, {T. V.} and Zhukov, {A. E.}",

year = "2016",

month = dec,

day = "21",

doi = "10.1063/1.4971977",

language = "English",

volume = "120",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "23",

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TY - JOUR

T1 - Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

AU - Kryzhanovskaya, N. V.

AU - Moiseev, E. I.

AU - Polubavkina, Yu S.

AU - Zubov, F. I.

AU - Maximov, M. V.

AU - Lipovskii, A. A.

AU - Kulagina, M. M.

AU - Troshkov, S. I.

AU - Korpijärvi, V. M.

AU - Niemi, T.

AU - Isoaho, R.

AU - Guina, M.

AU - Lebedev, M. V.

AU - Lvova, T. V.

AU - Zhukov, A. E.

PY - 2016/12/21

Y1 - 2016/12/21

N2 - We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T0 = 60 K.

AB - We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T0 = 60 K.

U2 - 10.1063/1.4971977

DO - 10.1063/1.4971977

M3 - Article

AN - SCOPUS:85007017155

SN - 0021-8979

VL - 120

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 23

M1 - 233103

ER -

Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

Abstrakti

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