Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm

Ville-Markus Korpijärvi; Emmi L. Kantola; Tomi Leinonen; Mircea Guina

doi:10.1117/12.2077517

Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm

Ville-Markus Korpijärvi, Emmi L. Kantola, Tomi Leinonen, Mircea Guina

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

We report the first monolithic GaAs-based vertical external-cavity surface-emitting laser (VECSEL) operating at 1550 nm. The VECSEL is based on a gain mirror which was grown by plasma-assisted molecular beam epitaxy and comprises 8 GaInNAsSb/GaAs quantum wells and an AlAs/GaAs distributed Bragg reflector. When pumped by an 808 nm diode laser, the laser exhibited an output power of 80 mW for a mount temperature of 16 °C.

Alkuperäiskieli	Englanti
Otsikko	SPIE conference proceedings
Kustantaja	SPIE
Vuosikerta	9349
ISBN (painettu)	9781628414394
DOI - pysyväislinkit	https://doi.org/10.1117/12.2077517
Tila	Julkaistu - 2015
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Vertical External Cavity Surface Emitting Lasers - , Iso-Britannia Kesto: 1 tammik. 2015 → …

Conference

Conference	Vertical External Cavity Surface Emitting Lasers
Maa/Alue	Iso-Britannia
Ajanjakso	1/01/15 → …

Julkaisufoorumi-taso

Jufo-taso 0

!!ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Pääsy asiakirjaan

10.1117/12.2077517

Siteeraa tätä

@inproceedings{ad5a938a036f40dc990430a583b8b2b1,

title = "Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm",

abstract = "We report the first monolithic GaAs-based vertical external-cavity surface-emitting laser (VECSEL) operating at 1550 nm. The VECSEL is based on a gain mirror which was grown by plasma-assisted molecular beam epitaxy and comprises 8 GaInNAsSb/GaAs quantum wells and an AlAs/GaAs distributed Bragg reflector. When pumped by an 808 nm diode laser, the laser exhibited an output power of 80 mW for a mount temperature of 16 °C.",

keywords = "dilute nitride, diode-pumped lasers, GaInNAsSb, semiconductor disk lasers, Semiconductor lasers, vertical external cavity surface emitting lasers",

author = "Ville-Markus Korpij{\"a}rvi and Kantola, {Emmi L.} and Tomi Leinonen and Mircea Guina",

year = "2015",

doi = "10.1117/12.2077517",

language = "English",

isbn = "9781628414394",

volume = "9349",

booktitle = "SPIE conference proceedings",

publisher = "SPIE",

address = "United States",

note = "Vertical External Cavity Surface Emitting Lasers ; Conference date: 01-01-2015",

}

TY - GEN

T1 - Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm

AU - Korpijärvi, Ville-Markus

AU - Kantola, Emmi L.

AU - Leinonen, Tomi

AU - Guina, Mircea

PY - 2015

Y1 - 2015

N2 - We report the first monolithic GaAs-based vertical external-cavity surface-emitting laser (VECSEL) operating at 1550 nm. The VECSEL is based on a gain mirror which was grown by plasma-assisted molecular beam epitaxy and comprises 8 GaInNAsSb/GaAs quantum wells and an AlAs/GaAs distributed Bragg reflector. When pumped by an 808 nm diode laser, the laser exhibited an output power of 80 mW for a mount temperature of 16 °C.

AB - We report the first monolithic GaAs-based vertical external-cavity surface-emitting laser (VECSEL) operating at 1550 nm. The VECSEL is based on a gain mirror which was grown by plasma-assisted molecular beam epitaxy and comprises 8 GaInNAsSb/GaAs quantum wells and an AlAs/GaAs distributed Bragg reflector. When pumped by an 808 nm diode laser, the laser exhibited an output power of 80 mW for a mount temperature of 16 °C.

KW - dilute nitride

KW - diode-pumped lasers

KW - GaInNAsSb

KW - semiconductor disk lasers

KW - Semiconductor lasers

KW - vertical external cavity surface emitting lasers

U2 - 10.1117/12.2077517

DO - 10.1117/12.2077517

M3 - Conference contribution

AN - SCOPUS:84925652903

SN - 9781628414394

VL - 9349

BT - SPIE conference proceedings

PB - SPIE

T2 - Vertical External Cavity Surface Emitting Lasers

Y2 - 1 January 2015

ER -

Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm

Abstrakti

Conference

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

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