Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser

Jussi Rautiainen; I. Krestnikov; Jari Nikkinen; Oleg G. Okhotnikov

doi:10.1117/12.873166

Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser

Julkaisun otsikon käännös: Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser

Jussi Rautiainen
, I. Krestnikov
, Jari Nikkinen
, Oleg G. Okhotnikov

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

3 Sitaatiot (Scopus)

48 Lataukset (Pure)

Abstrakti

We demonstrate a frequency doubled dual-gain quantum dot semiconductor disk laser operating at 590 nm. The reflective gain element, grown by molecular beam epitaxy, has active region composed of 39 layers of InGaAs Stranski- Krastanov quantum dots. The gain mirrors produce individually 3 W and 4 W of output power while the laser with both elements in a single cavity reveals 6 W at 1180 nm with beam quality factor of M2

Julkaisun otsikon käännös	Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser
Alkuperäiskieli	Englanti
Otsikko	Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, Photonics West, Jan 22 - 27, 2011, San Fransisco, CA, USA. Proceedings of SPIE
Toimittajat	Konstantin L. Vodopyanov
Julkaisupaikka	Bellingham, WA
Kustantaja	SPIE
Sivut	1-6
Sivumäärä	6
ISBN (painettu)	9780819484543
DOI - pysyväislinkit	https://doi.org/10.1117/12.873166
Tila	Julkaistu - 2011
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	SPIE CONFERENCE PROCEEDINGS - Kesto: 1 tammik. 1900 → …

Julkaisusarja

Nimi	Photonics West Conference
Kustantaja	SPIE
Vuosikerta	7017
ISSN (painettu)	0277-786X

Conference

Conference	SPIE CONFERENCE PROCEEDINGS
Ajanjakso	1/01/00 → …

Julkaisufoorumi-taso

Ei tasoa

Pääsy asiakirjaan

10.1117/12.873166

Rautiainen multi-watt orange light generation
Copyright 2011 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

http://urn.fi/URN:NBN:fi:tty-2011110314873

Siteeraa tätä

Rautiainen, J., Krestnikov, I., Nikkinen, J., & Okhotnikov, O. G. (2011). Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser. teoksessa K. L. Vodopyanov (Toimittaja), Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, Photonics West, Jan 22 - 27, 2011, San Fransisco, CA, USA. Proceedings of SPIE (Sivut 1-6). Artikkeli 791702 (Photonics West Conference; Vuosikerta 7017). SPIE. https://doi.org/10.1117/12.873166

Rautiainen, Jussi ; Krestnikov, I. ; Nikkinen, Jari et al. / Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser. Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, Photonics West, Jan 22 - 27, 2011, San Fransisco, CA, USA. Proceedings of SPIE. Toimittaja / Konstantin L. Vodopyanov. Bellingham, WA : SPIE, 2011. Sivut 1-6 (Photonics West Conference).

@inproceedings{8422c97c5606441884e518549586871d,

title = "Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser",

abstract = "We demonstrate a frequency doubled dual-gain quantum dot semiconductor disk laser operating at 590 nm. The reflective gain element, grown by molecular beam epitaxy, has active region composed of 39 layers of InGaAs Stranski- Krastanov quantum dots. The gain mirrors produce individually 3 W and 4 W of output power while the laser with both elements in a single cavity reveals 6 W at 1180 nm with beam quality factor of M2",

author = "Jussi Rautiainen and I. Krestnikov and Jari Nikkinen and Okhotnikov, \{Oleg G.\}",

note = "CD-ROM ja verkkojulkaisu<br/>Contribution: organisation=orc,FACT1=1; SPIE CONFERENCE PROCEEDINGS ; Conference date: 01-01-1900",

year = "2011",

doi = "10.1117/12.873166",

language = "English",

isbn = "9780819484543",

series = "Photonics West Conference",

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pages = "1--6",

editor = "Vodopyanov, \{Konstantin L.\}",

booktitle = "Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, Photonics West, Jan 22 - 27, 2011, San Fransisco, CA, USA. Proceedings of SPIE",

address = "United States",

}

Rautiainen, J, Krestnikov, I, Nikkinen, J & Okhotnikov, OG 2011, Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser. julkaisussa KL Vodopyanov (Toimittaja), Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, Photonics West, Jan 22 - 27, 2011, San Fransisco, CA, USA. Proceedings of SPIE., 791702, Photonics West Conference, Vuosikerta 7017, SPIE, Bellingham, WA, Sivut 1-6, SPIE CONFERENCE PROCEEDINGS, 1/01/00. https://doi.org/10.1117/12.873166

Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser. / Rautiainen, Jussi; Krestnikov, I.; Nikkinen, Jari et al.
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, Photonics West, Jan 22 - 27, 2011, San Fransisco, CA, USA. Proceedings of SPIE. toim. / Konstantin L. Vodopyanov. Bellingham, WA: SPIE, 2011. s. 1-6 791702 (Photonics West Conference; Vuosikerta 7017).

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

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AU - Rautiainen, Jussi

AU - Krestnikov, I.

AU - Nikkinen, Jari

AU - Okhotnikov, Oleg G.

N1 - CD-ROM ja verkkojulkaisu<br/>Contribution: organisation=orc,FACT1=1

PY - 2011

Y1 - 2011

N2 - We demonstrate a frequency doubled dual-gain quantum dot semiconductor disk laser operating at 590 nm. The reflective gain element, grown by molecular beam epitaxy, has active region composed of 39 layers of InGaAs Stranski- Krastanov quantum dots. The gain mirrors produce individually 3 W and 4 W of output power while the laser with both elements in a single cavity reveals 6 W at 1180 nm with beam quality factor of M2

AB - We demonstrate a frequency doubled dual-gain quantum dot semiconductor disk laser operating at 590 nm. The reflective gain element, grown by molecular beam epitaxy, has active region composed of 39 layers of InGaAs Stranski- Krastanov quantum dots. The gain mirrors produce individually 3 W and 4 W of output power while the laser with both elements in a single cavity reveals 6 W at 1180 nm with beam quality factor of M2

U2 - 10.1117/12.873166

DO - 10.1117/12.873166

M3 - Conference contribution

SN - 9780819484543

T3 - Photonics West Conference

SP - 1

EP - 6

BT - Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, Photonics West, Jan 22 - 27, 2011, San Fransisco, CA, USA. Proceedings of SPIE

A2 - Vodopyanov, Konstantin L.

PB - SPIE

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ER -

Rautiainen J, Krestnikov I, Nikkinen J, Okhotnikov OG. Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser. julkaisussa Vodopyanov KL, toimittaja, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, Photonics West, Jan 22 - 27, 2011, San Fransisco, CA, USA. Proceedings of SPIE. Bellingham, WA: SPIE. 2011. s. 1-6. 791702. (Photonics West Conference). doi: 10.1117/12.873166

Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser

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