Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells

Riku Isoaho; Arto Aho; Antti Tukiainen; Timo Aho; Marianna Raappana; Turkka Salminen; Jarno  Reuna; Mircea Guina

doi:10.1109/ESPC47532.2019.9049263

Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells

Riku Isoaho, Arto Aho, Antti Tukiainen, Timo Aho, Marianna Raappana, Turkka Salminen, Jarno Reuna, Mircea Guina

Fysiikka

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

11 Lataukset (Pure)

Abstrakti

Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.

Alkuperäiskieli	Englanti
Otsikko	2019 European Space Power Conference (ESPC)
Kustantaja	IEEE
Sivumäärä	3
ISBN (elektroninen)	978-1-7281-2126-0
ISBN (painettu)	978-1-7281-2127-7
DOI - pysyväislinkit	https://doi.org/10.1109/ESPC47532.2019.9049263
Tila	Julkaistu - 2019
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	European Space Power Conference - Kesto: 1 tammik. 2000 → …

Conference

Conference	European Space Power Conference
Ajanjakso	1/01/00 → …

Julkaisufoorumi-taso

Jufo-taso 1

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment

YK:n kestävän kehityksen tavoitteet

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Pääsy asiakirjaan

10.1109/ESPC47532.2019.9049263

Narrow Bandgap Dilute Nitride Materials 2019
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Accepted author manuscript, 196 KB

http://urn.fi/URN:NBN:fi:tuni-202009106949

Narrow Bandgap Dilute Nitride Materials for 6- junction Space Solar Cells
Isoaho, R. (Speaker), Aho, A. (Contributor), Tukiainen, A. (Contributor), Aho, T. (Contributor), Raappana, M. (Contributor), Salminen, T. (Contributor), Reuna, J. V. T. (Contributor) & Guina, M. (Contributor)
1 lokak. 2019
Aktiviteetti: Konferenssiesitelmä

Tampereen Mikroskopiakeskus
Vippola, M. (Manager), Honkanen, M. (Operator) & Salminen, T. (Operator)
Tekniikan ja luonnontieteiden tiedekunta
Laitteistot/tilat: Facility

Siteeraa tätä

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title = "Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells",

abstract = "Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.",

keywords = "Solar cell, dilute nitride semiconductors, III-V semiconductor",

author = "Riku Isoaho and Arto Aho and Antti Tukiainen and Timo Aho and Marianna Raappana and Turkka Salminen and Jarno Reuna and Mircea Guina",

year = "2019",

doi = "10.1109/ESPC47532.2019.9049263",

language = "English",

isbn = "978-1-7281-2127-7",

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publisher = "IEEE",

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note = "European Space Power Conference ; Conference date: 01-01-2000",

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TY - GEN

T1 - Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells

AU - Isoaho, Riku

AU - Aho, Arto

AU - Tukiainen, Antti

AU - Aho, Timo

AU - Raappana, Marianna

AU - Salminen, Turkka

AU - Reuna, Jarno

AU - Guina, Mircea

PY - 2019

Y1 - 2019

N2 - Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.

AB - Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.

KW - Solar cell

KW - dilute nitride semiconductors

KW - III-V semiconductor

U2 - 10.1109/ESPC47532.2019.9049263

DO - 10.1109/ESPC47532.2019.9049263

M3 - Conference contribution

SN - 978-1-7281-2127-7

BT - 2019 European Space Power Conference (ESPC)

PB - IEEE

T2 - European Space Power Conference

Y2 - 1 January 2000

ER -

Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells

Abstrakti

Conference

Julkaisufoorumi-taso

!!ASJC Scopus subject areas

YK:n kestävän kehityksen tavoitteet

Pääsy asiakirjaan

Sormenjälki

Aktiviteetit

Narrow Bandgap Dilute Nitride Materials for 6- junction Space Solar Cells

Laitteet

Tampereen Mikroskopiakeskus

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