Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures

Jeremy J. Guttman; Conner B. Chambers; Al Rey Villagracia; Gil Nonato C. Santos; Paul R. Berger

doi:10.1016/j.orgel.2017.05.015

Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO₂ tunneling barriers at various deposition temperatures

Jeremy J. Guttman
, Conner B. Chambers
, Al Rey Villagracia
, Gil Nonato C. Santos
, Paul R. Berger^*

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Katsausartikkeli › vertaisarvioitu

9 Sitaatiot (Scopus)

Abstrakti

Atomic layer deposition (ALD) presents a method to deposit uniform and conformal thin-film layers with a high degree of control and repeatability. Quantum functional devices that provide opportunities in low-power molecular and organic based memory and logic via thin metal-oxide tunneling layer were previously reported by Yoon et al. [1]. Demonstrated here area polymer tunnel diodes (PTD) with high negative differential resistance (NDR) using an ALD deposited tunneling layer grown between 250 °C – 350 °C. A critical relationship between deposition temperature, oxygen vacancy concentration and room temperature NDR is presented. In this work, for a TiO₂ deposition temperature of 250 °C, the peak NDR voltage position (V_peak) and associated peak current density (J_peak) are ∼4.3 V and −0.14 A/cm², respectively, with a PVCR as high as 1.69 while operating at room temperature. The highest PVCR recorded was 4.89 ± 0.18 using an ALD deposition temperature of 350 °C. The key advantages of the ALD process used in fabrication of PTDs are increased repeatability and manufacturability.

Alkuperäiskieli	Englanti
Sivut	228-234
Sivumäärä	7
Julkaisu	Organic Electronics
Vuosikerta	47
DOI - pysyväislinkit	https://doi.org/10.1016/j.orgel.2017.05.015
Tila	Julkaistu - elok. 2017
OKM-julkaisutyyppi	A2 Katsausartikkeli tieteellisessä aikakauslehdessä

Rahoitus

The authors would like to acknowledge funding from the National Science Foundation (ECCS-1002240 and ECCS-1609299). The authors would like to thank Prof. Don Lupo for technical discussions that lead to the more processible substitution of PDY-132 as the active organic semiconductor, which should permit printing tests together, and Picosun for their continued interest and support.

!!ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Yleinen kemia
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Pääsy asiakirjaan

10.1016/j.orgel.2017.05.015

Siteeraa tätä

@article{06a2715d2dcf4552b1033734d22e8612,

title = "Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures",

abstract = "Atomic layer deposition (ALD) presents a method to deposit uniform and conformal thin-film layers with a high degree of control and repeatability. Quantum functional devices that provide opportunities in low-power molecular and organic based memory and logic via thin metal-oxide tunneling layer were previously reported by Yoon et al. [1]. Demonstrated here area polymer tunnel diodes (PTD) with high negative differential resistance (NDR) using an ALD deposited tunneling layer grown between 250 °C – 350 °C. A critical relationship between deposition temperature, oxygen vacancy concentration and room temperature NDR is presented. In this work, for a TiO2 deposition temperature of 250 °C, the peak NDR voltage position (Vpeak) and associated peak current density (Jpeak) are ∼4.3 V and −0.14 A/cm2, respectively, with a PVCR as high as 1.69 while operating at room temperature. The highest PVCR recorded was 4.89 ± 0.18 using an ALD deposition temperature of 350 °C. The key advantages of the ALD process used in fabrication of PTDs are increased repeatability and manufacturability.",

keywords = "Atomic layer deposition, Conjugated polymers, Density-of-States, Oxygen vacancy defects, Quantum tunneling, Titanium dioxide, Tunnel diodes",

author = "Guttman, \{Jeremy J.\} and Chambers, \{Conner B.\} and Villagracia, \{Al Rey\} and Santos, \{Gil Nonato C.\} and Berger, \{Paul R.\}",

note = "Funding Information: The authors would like to acknowledge funding from the National Science Foundation (ECCS-1002240 and ECCS-1609299). The authors would like to thank Prof. Don Lupo for technical discussions that lead to the more processible substitution of PDY-132 as the active organic semiconductor, which should permit printing tests together, and Picosun for their continued interest and support. Publisher Copyright: {\textcopyright} 2017 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

year = "2017",

month = aug,

doi = "10.1016/j.orgel.2017.05.015",

language = "English",

volume = "47",

pages = "228--234",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier",

}

TY - JOUR

T1 - Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures

AU - Guttman, Jeremy J.

AU - Chambers, Conner B.

AU - Villagracia, Al Rey

AU - Santos, Gil Nonato C.

AU - Berger, Paul R.

N1 - Funding Information: The authors would like to acknowledge funding from the National Science Foundation (ECCS-1002240 and ECCS-1609299). The authors would like to thank Prof. Don Lupo for technical discussions that lead to the more processible substitution of PDY-132 as the active organic semiconductor, which should permit printing tests together, and Picosun for their continued interest and support. Publisher Copyright: © 2017 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2017/8

Y1 - 2017/8

N2 - Atomic layer deposition (ALD) presents a method to deposit uniform and conformal thin-film layers with a high degree of control and repeatability. Quantum functional devices that provide opportunities in low-power molecular and organic based memory and logic via thin metal-oxide tunneling layer were previously reported by Yoon et al. [1]. Demonstrated here area polymer tunnel diodes (PTD) with high negative differential resistance (NDR) using an ALD deposited tunneling layer grown between 250 °C – 350 °C. A critical relationship between deposition temperature, oxygen vacancy concentration and room temperature NDR is presented. In this work, for a TiO2 deposition temperature of 250 °C, the peak NDR voltage position (Vpeak) and associated peak current density (Jpeak) are ∼4.3 V and −0.14 A/cm2, respectively, with a PVCR as high as 1.69 while operating at room temperature. The highest PVCR recorded was 4.89 ± 0.18 using an ALD deposition temperature of 350 °C. The key advantages of the ALD process used in fabrication of PTDs are increased repeatability and manufacturability.

AB - Atomic layer deposition (ALD) presents a method to deposit uniform and conformal thin-film layers with a high degree of control and repeatability. Quantum functional devices that provide opportunities in low-power molecular and organic based memory and logic via thin metal-oxide tunneling layer were previously reported by Yoon et al. [1]. Demonstrated here area polymer tunnel diodes (PTD) with high negative differential resistance (NDR) using an ALD deposited tunneling layer grown between 250 °C – 350 °C. A critical relationship between deposition temperature, oxygen vacancy concentration and room temperature NDR is presented. In this work, for a TiO2 deposition temperature of 250 °C, the peak NDR voltage position (Vpeak) and associated peak current density (Jpeak) are ∼4.3 V and −0.14 A/cm2, respectively, with a PVCR as high as 1.69 while operating at room temperature. The highest PVCR recorded was 4.89 ± 0.18 using an ALD deposition temperature of 350 °C. The key advantages of the ALD process used in fabrication of PTDs are increased repeatability and manufacturability.

KW - Atomic layer deposition

KW - Conjugated polymers

KW - Density-of-States

KW - Oxygen vacancy defects

KW - Quantum tunneling

KW - Titanium dioxide

KW - Tunnel diodes

U2 - 10.1016/j.orgel.2017.05.015

DO - 10.1016/j.orgel.2017.05.015

M3 - Review Article

AN - SCOPUS:85019895150

SN - 1566-1199

VL - 47

SP - 228

EP - 234

JO - Organic Electronics

JF - Organic Electronics

ER -