Novel self-catalyzed GaAs nanowires with electrical contacts

Marcelo R. Piton; Eero Koivusalo; Soile Suomalainen; Teemu Hakkarainen; Mircea Guina

doi:10.1109/SBMicro.2016.7731335

Novel self-catalyzed GaAs nanowires with electrical contacts

Marcelo R. Piton, Eero Koivusalo, Soile Suomalainen, Teemu Hakkarainen, Mircea Guina

Tutkimustuotos: Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

Electrical contacting and transport measurements of single self-catalyzed GaAs nanowires grown by molecular beam epitaxy is presented. The nanowires are grown directly in silicon using a recently developed technique based on lithography-free Si/SiOx patterns fabricated by a self-assembled method, which allows synthesis of highly uniform nanowires with controllable size and density.

Alkuperäiskieli	Englanti
Otsikko	2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)
Kustantaja	IEEE
Sivut	1-3
Sivumäärä	3
ISBN (elektroninen)	978-1-5090-2788-0
DOI - pysyväislinkit	https://doi.org/10.1109/SBMicro.2016.7731335
Tila	Julkaistu - 3 marrask. 2016
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Symposium on Microelectronics Technology and Devices - Kesto: 1 tammik. 1900 → …

Conference

Conference	Symposium on Microelectronics Technology and Devices
Ajanjakso	1/01/00 → …

Julkaisufoorumi-taso

Jufo-taso 1

Pääsy asiakirjaan

10.1109/SBMicro.2016.7731335

Siteeraa tätä

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title = "Novel self-catalyzed GaAs nanowires with electrical contacts",

abstract = "Electrical contacting and transport measurements of single self-catalyzed GaAs nanowires grown by molecular beam epitaxy is presented. The nanowires are grown directly in silicon using a recently developed technique based on lithography-free Si/SiOx patterns fabricated by a self-assembled method, which allows synthesis of highly uniform nanowires with controllable size and density.",

keywords = "III-V semiconductors, electrical contacts, electron beam lithography, elemental semiconductors, gallium arsenide, molecular beam epitaxial growth, nanowires, silicon, wide band gap semiconductors, lithography-free silicon-silicon oxide patterns, molecular beam epitaxy, self-assembled method, self-catalyzed gallium arsenide nanowires, transport measurements, Contacts, Gallium arsenide, Nanowires, Scanning electron microscopy, Silicon, Substrates, Surface morphology, III-V nanowires, semiconductor nanostructures, transport properties",

author = "Piton, {Marcelo R.} and Eero Koivusalo and Soile Suomalainen and Teemu Hakkarainen and Mircea Guina",

note = "INT=orc,”Rizzo Piton, Marcelo”; Symposium on Microelectronics Technology and Devices ; Conference date: 01-01-1900",

year = "2016",

month = nov,

day = "3",

doi = "10.1109/SBMicro.2016.7731335",

language = "English",

pages = "1--3",

booktitle = "2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)",

publisher = "IEEE",

address = "United States",

}

TY - GEN

T1 - Novel self-catalyzed GaAs nanowires with electrical contacts

AU - Piton, Marcelo R.

AU - Koivusalo, Eero

AU - Suomalainen, Soile

AU - Hakkarainen, Teemu

AU - Guina, Mircea

N1 - INT=orc,”Rizzo Piton, Marcelo”

PY - 2016/11/3

Y1 - 2016/11/3

N2 - Electrical contacting and transport measurements of single self-catalyzed GaAs nanowires grown by molecular beam epitaxy is presented. The nanowires are grown directly in silicon using a recently developed technique based on lithography-free Si/SiOx patterns fabricated by a self-assembled method, which allows synthesis of highly uniform nanowires with controllable size and density.

AB - Electrical contacting and transport measurements of single self-catalyzed GaAs nanowires grown by molecular beam epitaxy is presented. The nanowires are grown directly in silicon using a recently developed technique based on lithography-free Si/SiOx patterns fabricated by a self-assembled method, which allows synthesis of highly uniform nanowires with controllable size and density.

KW - III-V semiconductors

KW - electrical contacts

KW - electron beam lithography

KW - elemental semiconductors

KW - gallium arsenide

KW - molecular beam epitaxial growth

KW - nanowires

KW - silicon

KW - wide band gap semiconductors

KW - lithography-free silicon-silicon oxide patterns

KW - molecular beam epitaxy

KW - self-assembled method

KW - self-catalyzed gallium arsenide nanowires

KW - transport measurements

KW - Contacts

KW - Gallium arsenide

KW - Nanowires

KW - Scanning electron microscopy

KW - Silicon

KW - Substrates

KW - Surface morphology

KW - III-V nanowires

KW - semiconductor nanostructures

KW - transport properties

U2 - 10.1109/SBMicro.2016.7731335

DO - 10.1109/SBMicro.2016.7731335

M3 - Conference contribution

SP - 1

EP - 3

BT - 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)

PB - IEEE

T2 - Symposium on Microelectronics Technology and Devices

Y2 - 1 January 1900

ER -

Novel self-catalyzed GaAs nanowires with electrical contacts

Abstrakti

Conference

Julkaisufoorumi-taso

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä