Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

M. Kuzmin, P. Laukkanen, M. Yasir, J. Mäkelä, M. Tuominen, J. Dahl, M. P. J. Punkkinen, K. Kokko, H. P. Hedman, J. Moon, R. Punkkinen, V. Polojärvi, V. M. Korpijärvi, M. Guina

    Tutkimustuotos: ArtikkeliScientificvertaisarvioitu

    5 Sitaatiot (Scopus)

    Abstrakti

    Oxidation of semiconductor surfaces is known to cause defect states at oxide-semiconductor interfaces of various devices. In contrast, effects of the semiconductor interaction with non-oxygen elements at such junctions are still unclear. We present evidence for the interrelationship between a metal (non-oxygen)-semiconductor reaction and formation of the band-gap defect states at a buried oxide-semiconductor interface by investigating well-defined epitaxial BaO/Ge(100) junctions with high-resolution synchrotron-radiation photoelectron spectroscopy. The states that arise from the Ba-Ge interaction lead to Fermi-level pinning at 0.40eV above the valence band maximum, while the defect-free BaO/Ge(100) interface has a flat band structure.

    AlkuperäiskieliEnglanti
    Artikkeli165311
    JulkaisuPhysical Review B
    Vuosikerta92
    Numero16
    DOI - pysyväislinkit
    TilaJulkaistu - 20 lokak. 2015
    OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

    Julkaisufoorumi-taso

    • Jufo-taso 2

    !!ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

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