Abstrakti
We have investigated optical and electrical properties of Te and Be doped GaAs nanowires (NW) grown by self-catalyzed molecular beam epitaxy. The NWs were grown on p-Si(111) substrates using a novel technique based on lithography-free Si/SiOx patterns fabricated by droplet epitaxy and spontaneous oxidation, which allows synthesis of highly uniform NWs with controllable size and density. The incorporation of Be- and Te-dopants in GaAs NWs was investigated by using transport, photoluminescence (PL) and Raman spectroscopy techniques.
Alkuperäiskieli | Englanti |
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Otsikko | 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro) |
Kustantaja | IEEE |
ISBN (elektroninen) | 978-1-5386-2877-5 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 1 elok. 2017 |
OKM-julkaisutyyppi | A4 Artikkeli konferenssijulkaisussa |
Tapahtuma | Symposium on Microelectronics Technology and Devices - Kesto: 1 tammik. 1900 → … |
Conference
Conference | Symposium on Microelectronics Technology and Devices |
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Ajanjakso | 1/01/00 → … |
Julkaisufoorumi-taso
- Jufo-taso 1