Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy

M. R. Piton, E. Koivusalo, S. Suomalainen, T. Hakkarainen, S. Souto, H. V. A. Galeti, A. Schramm, Y. G. Gobato, M. Guina

    Tutkimustuotos: KonferenssiartikkeliScientificvertaisarvioitu

    Abstrakti

    We have investigated optical and electrical properties of Te and Be doped GaAs nanowires (NW) grown by self-catalyzed molecular beam epitaxy. The NWs were grown on p-Si(111) substrates using a novel technique based on lithography-free Si/SiOx patterns fabricated by droplet epitaxy and spontaneous oxidation, which allows synthesis of highly uniform NWs with controllable size and density. The incorporation of Be- and Te-dopants in GaAs NWs was investigated by using transport, photoluminescence (PL) and Raman spectroscopy techniques.
    AlkuperäiskieliEnglanti
    Otsikko2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro)
    KustantajaIEEE
    ISBN (elektroninen)978-1-5386-2877-5
    DOI - pysyväislinkit
    TilaJulkaistu - 1 elok. 2017
    OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
    TapahtumaSymposium on Microelectronics Technology and Devices -
    Kesto: 1 tammik. 1900 → …

    Conference

    ConferenceSymposium on Microelectronics Technology and Devices
    Ajanjakso1/01/00 → …

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